Khrebtov Artyom Igorevich

Publications in Math-Net.Ru

1. Retranslation of luminescence excitation during cascade transitions in hybrid nanostructures based on INP/INASP/INP NWs and CDSE/ZNS-TOPO QDs
   
   Optics and Spectroscopy, 131:10 (2023),  1403–1411
2. Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  689–692
3. Nonlinear bleaching of InAs nanowires in the visible range
   
   Optics and Spectroscopy, 128:1 (2020),  128–133
4. The significance of fitting in the description of luminescence kinetics of hybrid nanowires
   
   Optics and Spectroscopy, 128:1 (2020),  122–127
5. Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  952–957
6. Nonradiative energy transfer in hybrid nanostructures with varied dimensionality
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1289–1292
7. Photodynamics of nonlinear effects of picosecond laser action on CdSe/ZnS QDs colloidal solutions
   
   Optics and Spectroscopy, 125:5 (2018),  658–663
8. The influence of polyvinylpyrrolidone molecular weight on the structure and the spectral and nonlinear optical properties of composite materials with CdS/ZnS nanoparticles
   
   Optics and Spectroscopy, 125:5 (2018),  608–614
9. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
10. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
11. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
12. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
13. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
14. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
15. Directional emission from beryllium doped GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
16. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
17. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
18. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
19. The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  49–55
20. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
21. Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  33–41
22. Photoinduced variation of the luminescent properties of PbS nanoparticle suspensions stabilized by polyvinylpyrrolidone
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:2 (2015),  25–33
23. Study of the electrical properties of individual (Ga,Mn)As nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  358–363
24. A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  36–43
25. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1356–1360
26. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
27. Photovoltaic properties of GaAs:Be nanowire arrays
    
    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  797–801
28. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
29. Studying the formation of self-assembled (In,Mn)As quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  21–27
30. Piezoelectric effect in GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1114–1116
31. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
32. Radical-ion mechanism of optical limiting in fullerene solutions
    
    Kvantovaya Elektronika, 34:5 (2004),  407–411