Lobintsov Aleksandr Viktorovich

Publications in Math-Net.Ru

1. InGaAs/AlInAs/InP quantum-cascade lasers with reflective and antireflective optical coatings
   
   Kvantovaya Elektronika, 54:2 (2024),  100–103
2. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers
   
   Kvantovaya Elektronika, 53:8 (2023),  641–644
3. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 – 5 μm emission wavelength
   
   Kvantovaya Elektronika, 53:5 (2023),  370–373
4. Semiconductor lasers with improved radiation characteristics
   
   Kvantovaya Elektronika, 52:12 (2022),  1079–1087
5. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
6. Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K
   
   Kvantovaya Elektronika, 50:8 (2020),  710–713
7. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
   
   Kvantovaya Elektronika, 50:5 (2020),  489–492
8. Double integrated laser-thyristor
   
   Kvantovaya Elektronika, 49:11 (2019),  1011–1013
9. AlGaInAs/InP semiconductor lasers with an increased electron barrier
   
   Kvantovaya Elektronika, 49:6 (2019),  519–521
10. Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 48:11 (2018),  993–995
11. A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm
    
    Kvantovaya Elektronika, 48:5 (2018),  472–475
12. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
    
    Kvantovaya Elektronika, 47:8 (2017),  693–695
13. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
    
    Kvantovaya Elektronika, 47:4 (2017),  291–293
14. Analysis of reliability of semiconductor emitters with different designs of cavities
    
    Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016),  83–88
15. Quantum cascade laser based on GaAs/Al_0.45Ga_0.55As heteropair grown by MOCVD
    
    Kvantovaya Elektronika, 46:5 (2016),  447–450
16. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
17. Threshold, power, and spectral characteristics of a semiconductor emitter with a fiber Bragg grating
    
    Zhurnal Tekhnicheskoi Fiziki, 82:6 (2012),  63–68
18. Study of the spectral and power characteristics of superluminescent diodes
    
    Kvantovaya Elektronika, 34:1 (2004),  15–19
19. Effect of parasitic elements of a ridge laser on its modulation characteristic
    
    Kvantovaya Elektronika, 33:5 (2003),  425–429
20. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    
    Kvantovaya Elektronika, 31:8 (2001),  659–660