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Publications in Math-Net.Ru
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Preferential sputtering of NiTi alloy by atomic and gas cluster ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023), 34–38
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Preferential sputtering of alloys by gas cluster ions
Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022), 1943–1950
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Amorphization of silicon nanowires upon irradiation with argon ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 11–14
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Gas-dynamic sources of cluster ions for basic and applied research
UFN, 192:7 (2022), 722–753
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Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon
Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1030–1036
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In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods
Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1900–1907
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Study of the distribution profile of iron ions implanted into silicon
Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 778–782
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Polishing superhard material surfaces with gas-cluster ion beams
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 18–23
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Gas cluster ion formation under pulsed supply of various working gases
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015), 8–14
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Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation
Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 535–538
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Fabrication of ultrafine silicon layers on sapphire
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012), 83–89
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Implantation of high-energy ions produced by femtosecond laser pulses
Kvantovaya Elektronika, 35:1 (2005), 33–37
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