Nedelin E T

Publications in Math-Net.Ru

1. Discretely tunable single-frequency fibre Bragg grating diode laser
   
   Kvantovaya Elektronika, 37:12 (2007),  1143–1145
2. Continuously tunable single-frequency 1.52-μm diode laser for gas analysis
   
   Kvantovaya Elektronika, 35:3 (2005),  241–242
3. Bragg fibre grating semiconductor lasers with the narrow emission spectrum in the 1530 – 1560-nm region
   
   Kvantovaya Elektronika, 31:6 (2001),  529–530
4. Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre
   
   Kvantovaya Elektronika, 25:4 (1998),  301–302
5. Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm
   
   Kvantovaya Elektronika, 23:9 (1996),  785–786
6. Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure
   
   Kvantovaya Elektronika, 19:7 (1992),  674–676
7. Spectral characteristics of InGaAsP/InP injection C³ lasers
   
   Kvantovaya Elektronika, 17:4 (1990),  410–411
8. Single-mode laser amplifier operating in the 1.3 μm range and using a buried stripe heterostructure
   
   Kvantovaya Elektronika, 16:8 (1989),  1606–1608
9. Radiation sources for fiber-optic communication lines with wavelength-division multiplexing of data channels in the range 1.3–1.6 μm
   
   Kvantovaya Elektronika, 15:4 (1988),  702–704
10. Optimization of the characteristics of a dispersive element based on a corrugated waveguide
    
    Kvantovaya Elektronika, 15:3 (1988),  569–574
11. Single-frequency semiconducting laser with $\lambda=1.3$ mu-m with the fiber external resonator
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987),  849–854
12. Low-threshold InGaAsP/InP injection lasers
    
    Kvantovaya Elektronika, 14:11 (1987),  2201–2202
13. SUPERLUMINESCENT EMITTERS ON THE BASIS OF GAINASP-INP HETEROSTRUCTURES WITH A 1,3-1,55MKM RADIATION WAVE-LENGTH
    
    Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983),  2286–2288
14. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY
    
    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
15. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
    
    Kvantovaya Elektronika, 9:9 (1982),  1902–1904
16. Service life of GalnPAs/lnP heterostructures
    
    Kvantovaya Elektronika, 8:9 (1981),  1985–1987