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Publications in Math-Net.Ru
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Diode-pumped solid-state Nd3+:Ca3Ga2Ge3O12 crystal lasers
Kvantovaya Elektronika, 37:8 (2007), 753–759
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CW lasing in Yb3+ : GGG crystals pumped at 0.925 μm
Kvantovaya Elektronika, 36:7 (2006), 587–590
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Growth and luminescence of epitaxial Yb0.3ErxGd2.7–xGa5O12 films
Kvantovaya Elektronika, 25:3 (1998), 233–235
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Efficient lasing near 1.4 μm in a (Cr, Ce, Nd):Gd3Ga5O12 crystal
Kvantovaya Elektronika, 20:6 (1993), 569–573
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Influence of Ce3+ ions on the spectroscopic and lasing properties of Y3Al5O12:Ce3+:Er3+ and Gd3Ga5O12:Ce3+:Er3+ crystals
Kvantovaya Elektronika, 19:7 (1992), 638–640
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Efficient neodymium-doped gadolinium gallium garnet crystal laser
Kvantovaya Elektronika, 18:7 (1991), 799–802
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Stimulated emission from a neodymium-doped gadolinium gallium garnet crystal due to the 4F3/2–4I13/2 (λ = 1.33 μm) transition
Kvantovaya Elektronika, 18:3 (1991), 298–300
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Efficient laser with a rectangular active element
Kvantovaya Elektronika, 18:3 (1991), 296–297
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Erbium gadolinium gallium garnet crystal laser
Kvantovaya Elektronika, 18:2 (1991), 179–181
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Lasing of a calcium niobium gallium garnet crystal activated with chromium and erbium (λ = 2.71 μm)
Kvantovaya Elektronika, 17:7 (1990), 865–866
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Effect of chemical composition on heat-and temperature conductivity and heat capacity of gallium garnets
Dokl. Akad. Nauk SSSR, 309:1 (1989), 92–96
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Effect of impurities and intermediate composition on the lattice heat conductivity of synthetic garnets
Fizika Tverdogo Tela, 31:7 (1989), 139–143
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Temperature dependences of the heat-capacity, diffusivity, and thermal-conductivity of gallium garnets ($300$–$700$ K)
TVT, 27:6 (1989), 1097–1102
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Spectroscopic and laser characteristics of the $\mathrm{Ca}$, $\mathrm{Mg}$, $\mathrm{Zr}$-substituted gadolinium-gallium garnet crystals doped with chromium and neodymium
Dokl. Akad. Nauk SSSR, 301:1 (1988), 79–83
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Spectroscopic and lasing properties of calcium niobium gallium garnet activated with Cr3+ and Nd3+
Kvantovaya Elektronika, 15:2 (1988), 312–317
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Nonuniform composition study of $\mathrm{Bi}$-containing submicron thickness ferrite-garnet films
Fizika Tverdogo Tela, 27:6 (1985), 1712–1717
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Fotomagnetism and susceptibility anisotropy of epitaxially grown YIG films
Fizika Tverdogo Tela, 27:5 (1985), 1449–1451
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COEFFICIENTS OF THE RARE-EARTH ION DISTRIBUTION IN FERRITE-GARNET FILMS
ON GADOLINIUM-GALLIUM GARNET SUBSTRATES
Zhurnal Tekhnicheskoi Fiziki, 55:2 (1985), 426–428
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CONTROL REPTATION OF DOMAIN-WALLS IN FERRITE GARNET-FILMS
Zhurnal Tekhnicheskoi Fiziki, 54:12 (1984), 2423–2425
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FAST MOVEMENT OF DOMAIN-WALLS IN (EU,LU,BI)3(FE,GA,AL)5O12 FILMS
Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1381–1383
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Synthesis and investigation of spectral, luminescence, and lasing properties of alumoborate crystals activated with chromium and neodymium ions
Kvantovaya Elektronika, 7:10 (1980), 2105–2111
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Stimulated emission from alexandrite (BeAl2O4:Cr3+)
Kvantovaya Elektronika, 5:5 (1978), 1168–1169
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Nonradiative losses due to the 4I11/2–4I13/2 transition of the Er3+ ion in Y3Al5O12, Gd3Sc2Al3O12, Y3Ga5O12, Gd3Ga5O12, and CaF2 crystals
Kvantovaya Elektronika, 5:5 (1978), 1028–1033
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Pulse-periodic Y3Al5O12:Er3+ laser with high activator concentration
Kvantovaya Elektronika, 5:1 (1978), 150–152
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Cross section of the 4I11/2–4I13/2 laser transition in Er3+ ions in yttrium–erbium–aluminum garnet crystals
Kvantovaya Elektronika, 4:1 (1977), 198–201
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Radiative and nonradiative transitions exhibited by Er3+ ions in mixed yttrium-erbium aluminum garnets
Kvantovaya Elektronika, 3:7 (1976), 1471–1477
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Spectroscopic properties of neodymium-activated scandium garnets
Kvantovaya Elektronika, 3:3 (1976), 618–621
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Color centers in yttrium-aluminum and yttrium-erbium-aluminum garnet crystals
Kvantovaya Elektronika, 3:3 (1976), 589–594
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Stimulated emission from Er3+ ions in yttrium aluminum garnet crystals at λ = 2.94 μ
Kvantovaya Elektronika, 1:8 (1974), 1867–1869
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X-ray luminescence of rare-earth elements ions in crystals
Dokl. Akad. Nauk SSSR, 188:6 (1969), 1258–1260
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Vyacheslav Vasil'evich Osiko (on his fiftieth birthday)
Kvantovaya Elektronika, 9:5 (1982), 1072
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