Zalevskii Igor' Dmitrievich

Publications in Math-Net.Ru

1. Multimode cladding-pumped erbium-doped fibre laser
   
   Kvantovaya Elektronika, 37:4 (2007),  343–344
2. Highly efficient, compact diode-pumped acousto-optically Q-switched 1.064-μm Nd³⁺:YAG laser operating in cw and pulsed regimes
   
   Kvantovaya Elektronika, 35:6 (2005),  507–510
3. Efficient 0.9-μm neodymium-doped single-mode fibre laser
   
   Kvantovaya Elektronika, 33:12 (2003),  1035–1037
4. A 1.65-μm fibre Raman amplifier
   
   Kvantovaya Elektronika, 32:8 (2002),  747–750
5. Constructional features of a LISD-2M laser velocimeter and rangefinder
   
   Kvantovaya Elektronika, 32:3 (2002),  247–250
6. Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
   
   Kvantovaya Elektronika, 32:3 (2002),  216–218
7. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
   
   Kvantovaya Elektronika, 32:3 (2002),  213–215
8. On the kinetics of nonradiative energy transfer in Yb – Er phosphate glasses excited by a diode laser
   
   Kvantovaya Elektronika, 32:3 (2002),  197–201
9. High-power erbium-doped fibre amplifier pumped by a phosphosilicate fibre Raman converter
   
   Kvantovaya Elektronika, 31:9 (2001),  801–803
10. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    
    Kvantovaya Elektronika, 31:8 (2001),  659–660
11. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction
    
    Kvantovaya Elektronika, 27:1 (1999),  1–2
12. Experimental investigation and simulation of the output characteristics of powerful cw diode lasers operating in the spectral range 808 nm with a total efficiency of up to 50%
    
    Kvantovaya Elektronika, 25:7 (1998),  611–615
13. Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50%
    
    Kvantovaya Elektronika, 25:4 (1998),  303–304
14. Impurity Band of Iron Clusters in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  250–254


15. Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
    
    Kvantovaya Elektronika, 32:6 (2002),  564