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Meshkov A S
Publications in Math-Net.Ru
Analysis of reliability of semiconductor emitters with different designs of cavities
Zhurnal Tekhnicheskoi Fiziki
,
86
:10 (2016),
83–88
Laser emitters (
$\lambda$
= 808 nm) based on AlGaAs/GaAs heterostructures
Fizika i Tekhnika Poluprovodnikov
,
48
:1 (2014),
120–124
AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
Kvantovaya Elektronika
,
43
:10 (2013),
895–897
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Steklov Math. Inst. of RAS
, 2026