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Publications in Math-Net.Ru
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Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
Kvantovaya Elektronika, 38:2 (2008), 97–102
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Discretely tunable single-frequency fibre Bragg grating diode laser
Kvantovaya Elektronika, 37:12 (2007), 1143–1145
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Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range
Kvantovaya Elektronika, 35:10 (2005), 909–911
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Bragg fibre grating semiconductor lasers with the narrow emission spectrum in the 1530 – 1560-nm region
Kvantovaya Elektronika, 31:6 (2001), 529–530
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Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre
Kvantovaya Elektronika, 25:4 (1998), 301–302
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Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm
Kvantovaya Elektronika, 23:9 (1996), 785–786
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Leakage currents and 1/f noise in buried InGaAsP/InP heterostructure lasers
Kvantovaya Elektronika, 17:8 (1990), 964–968
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