Krichevskii Viktor Viktorovich

Publications in Math-Net.Ru

1. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
2. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
3. Double integrated laser-thyristor
   
   Kvantovaya Elektronika, 49:11 (2019),  1011–1013
4. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  104–108
5. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
6. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
   
   Kvantovaya Elektronika, 39:8 (2009),  723–726
7. Double integrated nanostructures for pulsed 0.9-μm laser diodes
   
   Kvantovaya Elektronika, 38:11 (2008),  989–992
8. Generation of picosecond visible pulses in an inhomogeneously excited (GaIn)P heterolaser
   
   Kvantovaya Elektronika, 23:8 (1996),  699–700