Zverkov Mikhail Viktorovich

Publications in Math-Net.Ru

1. Double integrated laser-thyristor
   
   Kvantovaya Elektronika, 49:11 (2019),  1011–1013
2. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
3. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  104–108
4. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
5. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
   
   Kvantovaya Elektronika, 39:8 (2009),  723–726
6. Double integrated nanostructures for pulsed 0.9-μm laser diodes
   
   Kvantovaya Elektronika, 38:11 (2008),  989–992
7. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
   
   Kvantovaya Elektronika, 32:3 (2002),  213–215
8. Emission of optically coupled semiconductor lasers
   
   Kvantovaya Elektronika, 30:10 (2000),  867–872
9. Generation of picosecond visible pulses in an inhomogeneously excited (GaIn)P heterolaser
   
   Kvantovaya Elektronika, 23:8 (1996),  699–700
10. Quantum-well C³ laser
    
    Kvantovaya Elektronika, 21:5 (1994),  414–416
11. CHARACTERISTICS OF SPECTRAL DEPENDENCE OF AMPLIFICATION FACTOR OF EXTERNAL EMISSION IN SEMICONDUCTING LASER
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:9 (1992),  20–22
12. Amplification of external radiation in a semiconductor laser in the lasing state
    
    Kvantovaya Elektronika, 19:7 (1992),  661–667
13. Injection quantum-well laser with external optical feedback
    
    Kvantovaya Elektronika, 19:7 (1992),  657–661
14. Laser diode emitting cw 663 nm radiation at room temperature
    
    Kvantovaya Elektronika, 18:7 (1991),  824–825
15. Matching of a stripe injection laser to an external resonator
    
    Kvantovaya Elektronika, 17:6 (1990),  781–786
16. Transient processes in a C³ laser
    
    Kvantovaya Elektronika, 16:5 (1989),  905–911
17. INCREASING THE TENSION DROP IN AN INJECTION-LASER UNDER THE EXTERNAL OPTICAL FEEDBACK
    
    Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988),  1149–1153
18. Dynamic variation of the pulse repetition frequency in a passively mode-locked injection laser
    
    Kvantovaya Elektronika, 15:9 (1988),  1724–1729
19. High-efficiency solid-state laser emitting green light
    
    Kvantovaya Elektronika, 15:5 (1988),  962–963
20. Mode hopping in a three-section injection laser
    
    Kvantovaya Elektronika, 15:4 (1988),  714–716
21. FORMATION OF ULTRA-SHORT LIGHT-PULSES IN INJECTION-LASERS WITH SYNCHRONOUS MODES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1217–1219
22. Tuning of the emission spectrum of a C³ laser
    
    Kvantovaya Elektronika, 14:2 (1987),  342–350
23. INJECTION-LASERS, SPATIALLY COUPLED WITH THE EXTERNAL MIRROR
    
    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  414–416
24. Anomalously wide continuous tuning range of the emission frequency of an injection laser with an external selective resonator
    
    Kvantovaya Elektronika, 13:7 (1986),  1391–1400
25. Transmission of an optical signal with a frequency-switched carrier
    
    Kvantovaya Elektronika, 13:5 (1986),  1061–1062
26. Efficient method for the smooth frequency retuning of the injection-laser with the exterior disperse resonator
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  777–780
27. Influence of an external mirror on the characteristics of semiconductor laser radiation
    
    Kvantovaya Elektronika, 12:2 (1985),  397–400
28. SPATIAL-TIME CHARACTERISTICS OF IRRADIATION OF UNIMODE INJECTION-LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:12 (1983),  2408–2410
29. Инжекционный лазер видимого диапазона с высокой яркостью
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:10 (1983),  590–593
30. Heterodyne determination of the width of the emission lines of injection lasers in the beat frequency stabilization regime
    
    Kvantovaya Elektronika, 10:8 (1983),  1527–1529
31. Fiber-optic interferometer based on a multimode waveguide excited by an injection heterolaser
    
    Kvantovaya Elektronika, 10:5 (1983),  1048–1049
32. Influence of an external feedback on the tuning of the emission frequency of a semiconductor laser
    
    Kvantovaya Elektronika, 10:5 (1983),  1019–1021
33. Radiative characteristics of injection lasers with short resonators
    
    Kvantovaya Elektronika, 10:2 (1983),  364–370
34. An integrated GaAs distributed-feedback oscillator–amplifier system
    
    Kvantovaya Elektronika, 8:2 (1981),  250–255
35. Injection heterolaser with a short resonator
    
    Kvantovaya Elektronika, 6:2 (1979),  402–404
36. Temporal and spectral characteristics of a distributed–feedback semiconductor laser pumped by an electron beam
    
    Kvantovaya Elektronika, 6:1 (1979),  249–254
37. Coupling radiation out of a distributed-feedback semiconductor laser excited by an electron beam
    
    Kvantovaya Elektronika, 6:1 (1979),  104–108
38. Distributed-feedback semiconductor lasers operating in higher Bragg interaction orders
    
    Kvantovaya Elektronika, 5:12 (1978),  2654–2656