Sukharev A V

Publications in Math-Net.Ru

1. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
2. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
   
   Kvantovaya Elektronika, 39:8 (2009),  723–726
3. High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
   
   Kvantovaya Elektronika, 39:1 (2009),  18–20
4. Double integrated nanostructures for pulsed 0.9-μm laser diodes
   
   Kvantovaya Elektronika, 38:11 (2008),  989–992
5. Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
   
   Kvantovaya Elektronika, 38:2 (2008),  97–102
6. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range
   
   Kvantovaya Elektronika, 35:10 (2005),  909–911