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Duraev Vladimir Petrovich

Publications in Math-Net.Ru

  1. Single-frequency tunable external-cavity semiconductor lasers emitting at 1550 nm

    Kvantovaya Elektronika, 53:12 (2023),  887–890
  2. 1064-nm tunable single-frequency semiconductor laser module

    Kvantovaya Elektronika, 52:9 (2022),  775–778
  3. Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

    Kvantovaya Elektronika, 46:10 (2016),  870–872
  4. Single-frequency tunable semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  125–128
  5. Fibre ring cavity semiconductor laser

    Kvantovaya Elektronika, 43:10 (2013),  914–916
  6. A semiconductor ring laser: study of its characteristics as a rotation sensor

    Kvantovaya Elektronika, 40:10 (2010),  851–854
  7. Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes

    Kvantovaya Elektronika, 38:2 (2008),  97–102
  8. Discretely tunable single-frequency fibre Bragg grating diode laser

    Kvantovaya Elektronika, 37:12 (2007),  1143–1145
  9. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range

    Kvantovaya Elektronika, 35:10 (2005),  909–911
  10. Continuously tunable single-frequency 1.52-μm diode laser for gas analysis

    Kvantovaya Elektronika, 35:3 (2005),  241–242
  11. Bragg fibre grating semiconductor lasers with the narrow emission spectrum in the 1530 – 1560-nm region

    Kvantovaya Elektronika, 31:6 (2001),  529–530
  12. Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre

    Kvantovaya Elektronika, 25:4 (1998),  301–302
  13. Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm

    Kvantovaya Elektronika, 23:9 (1996),  785–786
  14. Laser diode module with distributed feedback, single-mode fibre waveguide, and optical isolator

    Kvantovaya Elektronika, 22:7 (1995),  653–655
  15. Quantum-well InGaAsP\/InP lasers

    Kvantovaya Elektronika, 22:2 (1995),  105–107
  16. Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure

    Kvantovaya Elektronika, 19:7 (1992),  674–676
  17. Fiber Michelson interferometer with loss compensation

    Kvantovaya Elektronika, 18:9 (1991),  1137–1139
  18. Radiative characteristics of buried mesa stripe heterolasers emitting at 1.5 μm

    Kvantovaya Elektronika, 17:9 (1990),  1147–1150
  19. Spectral characteristics of InGaAsP/InP injection C3 lasers

    Kvantovaya Elektronika, 17:4 (1990),  410–411
  20. Single-mode laser amplifier operating in the 1.3 μm range and using a buried stripe heterostructure

    Kvantovaya Elektronika, 16:8 (1989),  1606–1608
  21. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

    Kvantovaya Elektronika, 15:11 (1988),  2196–2198
  22. Influence of the coherence length of a laser on the noise characteristics of frequency-modulated fiber-optic communication lines

    Kvantovaya Elektronika, 15:10 (1988),  2158–2160
  23. Width and profile of the emission line of a cw InGaAsP/InP laser with a buried stripe heterostructure

    Kvantovaya Elektronika, 15:8 (1988),  1552–1554
  24. Radiation sources for fiber-optic communication lines with wavelength-division multiplexing of data channels in the range 1.3–1.6 μm

    Kvantovaya Elektronika, 15:4 (1988),  702–704
  25. Optimization of the characteristics of a dispersive element based on a corrugated waveguide

    Kvantovaya Elektronika, 15:3 (1988),  569–574
  26. Asymmetric emission spectrum of an injection laser with an external optical feedback

    Kvantovaya Elektronika, 15:2 (1988),  247–252
  27. CONTINUOUS GENERATION AND HIGH-TEMPERATURE LASER TESTS UNDER 100-DEGREES-C BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 57:8 (1987),  1570–1574
  28. Single-frequency semiconducting laser with $\lambda=1.3$ mu-m with the fiber external resonator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987),  849–854
  29. Study of retuned characteristics of single-frequency semiconducting lasers with the spectral high-resolution

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  718–723
  30. Low-threshold InGaAsP/InP injection lasers

    Kvantovaya Elektronika, 14:11 (1987),  2201–2202
  31. Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range

    Kvantovaya Elektronika, 14:1 (1987),  204–205
  32. Continuous-wave InGaAsP/InP injection lasers emitting short wavelengths

    Kvantovaya Elektronika, 13:1 (1986),  170–171
  33. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
  34. SUPERLUMINESCENT EMITTERS ON THE BASIS OF GAINASP-INP HETEROSTRUCTURES WITH A 1,3-1,55MKM RADIATION WAVE-LENGTH

    Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983),  2286–2288
  35. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
  36. Optical fiber coupling of 1.2–1.6 μ radiation emitted from buried mesastripe injection lasers

    Kvantovaya Elektronika, 10:3 (1983),  633–635
  37. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers

    Kvantovaya Elektronika, 9:9 (1982),  1902–1904
  38. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range

    Kvantovaya Elektronika, 9:9 (1982),  1749
  39. Service life of GalnPAs/lnP heterostructures

    Kvantovaya Elektronika, 8:9 (1981),  1985–1987

  40. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)

    Kvantovaya Elektronika, 48:3 (2018),  290

© Steklov Math. Inst. of RAS, 2026