Sapozhnikov Sergei Mikhailovich

Publications in Math-Net.Ru

1. Semiconductor lasers with improved radiation characteristics
   
   Kvantovaya Elektronika, 52:12 (2022),  1079–1087
2. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
3. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
   
   Kvantovaya Elektronika, 50:5 (2020),  489–492
4. Double integrated laser-thyristor
   
   Kvantovaya Elektronika, 49:11 (2019),  1011–1013
5. AlGaInAs/InP semiconductor lasers with an increased electron barrier
   
   Kvantovaya Elektronika, 49:6 (2019),  519–521
6. Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 48:11 (2018),  993–995
7. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
   
   Kvantovaya Elektronika, 47:8 (2017),  693–695
8. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
   
   Kvantovaya Elektronika, 47:4 (2017),  291–293
9. Quantum cascade laser based on GaAs/Al_0.45Ga_0.55As heteropair grown by MOCVD
   
   Kvantovaya Elektronika, 46:5 (2016),  447–450
10. Laser emitters ($\lambda$ = 808 nm) based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  120–124
11. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  104–108
12. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
    
    Kvantovaya Elektronika, 43:10 (2013),  895–897
13. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
14. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  697–699
15. 808-nm laser diode bars based on epitaxially stacked double heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  682–684
16. Constructional features of a LISD-2M laser velocimeter and rangefinder
    
    Kvantovaya Elektronika, 32:3 (2002),  247–250
17. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    
    Kvantovaya Elektronika, 31:8 (2001),  659–660
18. Investigation of the service life of cw GaAIAs/GaAs injection lasers
    
    Kvantovaya Elektronika, 14:4 (1987),  892–894
19. Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts
    
    Kvantovaya Elektronika, 12:2 (1985),  367–369
20. Influence of spectral width on power fluctuations of injection lasers
    
    Kvantovaya Elektronika, 12:2 (1985),  347–350
21. Investigation of a two-component injection heterojunction laser
    
    Kvantovaya Elektronika, 7:11 (1980),  2489–2491
22. Investigation of transient stimulated emission from optically coupled lasers
    
    Kvantovaya Elektronika, 3:8 (1976),  1808–1811