Lebedeva E I

Publications in Math-Net.Ru

1. Laser emitters ($\lambda$ = 808 nm) based on AlGaAs/GaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  120–124
2. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
   
   Kvantovaya Elektronika, 43:10 (2013),  895–897
3. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
4. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
   
   Kvantovaya Elektronika, 40:8 (2010),  697–699
5. 808-nm laser diode bars based on epitaxially stacked double heterostructures
   
   Kvantovaya Elektronika, 40:8 (2010),  682–684
6. Pulsed solid-state laser pumped optically by laser diode arrays
   
   Kvantovaya Elektronika, 18:3 (1991),  294–295