Vasil'ev Aleksei Petrovich

Publications in Math-Net.Ru

1. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
2. Surface lasing in micropillar cavity lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  58–62
3. Bimodal whispering-gallery mode lasing in micropillar cavity lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  41–44
4. The study of the phase noise of 89X nm-range single-mode intra-cavity contacted vcsels
   
   Optics and Spectroscopy, 132:12 (2024),  1230–1232
5. Linewidth of 89Х nm-range intra-cavity contacted VCSELs
   
   Optics and Spectroscopy, 132:12 (2024),  1226–1229
6. Study of the structural and optical properties of InGaAs quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  318–325
7. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
8. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
9. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
10. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
11. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
12. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
13. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
14. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
15. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
16. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
17. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
18. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
19. The effect of active region heating on dynamic and power characteristics of quantum cascade lasers emitting at a wavelength of 4.8 $\mu$m at room temperature
    
    Optics and Spectroscopy, 127:3 (2019),  445–448
20. Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1218–1223
21. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
22. Heterobarrier varactors with nonuniformly doped modulation layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  51–54
23. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks
    
    Kvantovaya Elektronika, 49:2 (2019),  187–190
24. Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1337–1345
25. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
26. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
27. Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  466
28. Investigation of the modified structure of a quantum cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
29. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
30. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
31. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
32. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
33. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
34. Optimization of the superlattice parameters for THz diodes
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1493–1497
35. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
36. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
37. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1548–1553
38. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
39. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
40. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
41. Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1473–1477
42. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
43. Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  30–34
44. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
45. Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  22–30
46. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
47. Optical anisotropy of InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
48. Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors
    
    Fizika Tverdogo Tela, 53:6 (2011),  1188–1197
49. Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:24 (2011),  9–15
50. Carrier heating in quantum wells under optical and current injection of electron-hole pairs
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1451–1454
51. Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1443–1446
52. An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1260–1265
53. Wannier–Stark states in a superlattice of InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  790–794
54. Optical anisotropy of InAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30
55. Stimulated emission from optically pumped quantum dots
    
    Kvantovaya Elektronika, 40:7 (2010),  579–582
56. Optimization of a marine MHD propeller
    
    Prikl. Mekh. Tekh. Fiz., 22:3 (1981),  86–94
57. К вопросу аналогии пузырькового кипения с процессом электролиза морской воды в канале МГД-движителя
    
    TVT, 18:5 (1980),  1116