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Publications in Math-Net.Ru
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Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots
Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1431–1440
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Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
Fizika i Tekhnika Poluprovodnikov, 45:11 (2011), 1486–1488
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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 132–135
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On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 87–92
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Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm3+:Lu2O3 ceramics
Kvantovaya Elektronika, 41:10 (2011), 863–868
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Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
Fizika i Tekhnika Poluprovodnikov, 44:12 (2010), 1645–1648
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Errata to the article: Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm3+:Lu2O3 ceramics
Kvantovaya Elektronika, 41:12 (2011), 1130
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