Kasatkin Aleksandr Petrovich

Publications in Math-Net.Ru

1. X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
   
   Fizika Tverdogo Tela, 60:3 (2018),  591–595
2. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
   
   Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
3. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1639–1643
4. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
5. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  78–84
6. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  52–60
7. Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  72–79
8. The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  81–89
9. Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  62–70
10. The forming process in resistive-memory elements based on metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014),  18–26
11. Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  9–16
12. Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014),  12–19
13. Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  72–79
14. Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er$^{3+}$ and Yb$^{3+}$ ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  71–77
15. Peculiarities in the formation of gold nanoparticles by ion implantation in stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  60–65
16. Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm³⁺:Lu₂O₃ ceramics
    
    Kvantovaya Elektronika, 41:10 (2011),  863–868
17. The effect of oversaturation on the activity of centres of growth
    
    Dokl. Akad. Nauk SSSR, 154:4 (1964),  827–828


18. Errata to the article: Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm³⁺:Lu₂O₃ ceramics
    
    Kvantovaya Elektronika, 41:12 (2011),  1130