Gorshkov Oleg Nikolaevich

Publications in Math-Net.Ru

1. In situ investigation of filament growth in yttria stabilized zirconia films by contact capacitance atomic force microscopy
   
   Fizika Tverdogo Tela, 67:8 (2025),  1441–1445
2. Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
3. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
4. Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  5–8
5. Scanning Kelvin Probe Microscopy investigation of optically induced charge in Au nanoparticles embedded into ZrO$_2$(Y) films
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1937–1942
6. Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
   
   Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1474–1478
7. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
8. Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  23–26
9. The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021),  30–32
10. Resistive switching of memristors based on stabilized zirconia by complex signals
    
    Fizika Tverdogo Tela, 62:4 (2020),  556–561
11. An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1825–1829
12. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
13. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
    
    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
14. Resistive switching in memristors based on Ag/Ge/Si heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  44–46
15. Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1669–1673
16. Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  927–934
17. X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
    
    Fizika Tverdogo Tela, 60:3 (2018),  591–595
18. A comparative analysis of the observed effects of 2d tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional au-qd systems in an external electric field
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018),  724–734
19. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
20. Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  470
21. Features of switching memristor structures to a high-resistance state by sawtooth pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  88–93
22. Simulation of synaptic coupling of neuron-like generators via a memristive device
    
    Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1248–1254
23. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
    
    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
24. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1639–1643
25. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
26. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  78–84
27. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24
28. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  52–60
29. Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  72–79
30. The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  81–89
31. Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  62–70
32. Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities
    
    Fizika Tverdogo Tela, 56:3 (2014),  607–610
33. The forming process in resistive-memory elements based on metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014),  18–26
34. Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  9–16
35. Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014),  12–19
36. Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  72–79
37. Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er$^{3+}$ and Yb$^{3+}$ ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  71–77
38. Peculiarities in the formation of gold nanoparticles by ion implantation in stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  60–65
39. Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities
    
    Fizika Tverdogo Tela, 53:12 (2011),  2294–2298
40. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
41. Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm³⁺:Lu₂O₃ ceramics
    
    Kvantovaya Elektronika, 41:10 (2011),  863–868
42. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
43. Features of two-dimensional tunnel bifurcations under conditions of an external electric field
    
    University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 2,  123–135
44. Luminescence of Cr⁴⁺:Ca₂GeO₄ films in the near infrared region
    
    Kvantovaya Elektronika, 30:3 (2000),  261–262
45. Characteristic X-Ray Radiation Study of Disturbances in Low-Lying Levels in InSb Implanted Single Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  189–191


46. Errata to the article: Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm³⁺:Lu₂O₃ ceramics
    
    Kvantovaya Elektronika, 41:12 (2011),  1130