Volkov Nikita Aleksandrovich

Publications in Math-Net.Ru

1. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
   
   Kvantovaya Elektronika, 52:2 (2022),  179–181
2. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
   
   Kvantovaya Elektronika, 51:10 (2021),  909–911
3. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
4. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
   
   Kvantovaya Elektronika, 51:4 (2021),  283–286
5. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
   
   Kvantovaya Elektronika, 51:2 (2021),  133–136
6. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
   
   Kvantovaya Elektronika, 50:12 (2020),  1123–1125
7. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
   
   Kvantovaya Elektronika, 50:5 (2020),  489–492
8. Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard
   
   Kvantovaya Elektronika, 41:8 (2011),  692–696
9. Broadband near-IR double quantum-well heterostructure superluminescent diodes
   
   Kvantovaya Elektronika, 38:8 (2008),  744–746