Romantsevich Valentina Ivanovna

Publications in Math-Net.Ru

1. Increasing the pump current range of a single-frequency laser diode tuned to the caesium D₂ line
   
   Kvantovaya Elektronika, 51:11 (2021),  970–975
2. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
   
   Kvantovaya Elektronika, 50:6 (2020),  600–602
3. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
   
   Kvantovaya Elektronika, 50:2 (2020),  143–146
4. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
   
   Kvantovaya Elektronika, 49:7 (2019),  649–652
5. AlGaInAs/InP semiconductor lasers with an increased electron barrier
   
   Kvantovaya Elektronika, 49:6 (2019),  519–521
6. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
   
   Kvantovaya Elektronika, 48:6 (2018),  495–501
7. Analysis of reliability of semiconductor emitters with different designs of cavities
   
   Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016),  83–88
8. Parameters of a laser diode with a fiber Bragg grating at different fiber lengths
   
   Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  108–112
9. High-power pulse-emitting lasers in the 1.5–1.6 $\mu$m spectral region
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  100–103
10. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
    
    Kvantovaya Elektronika, 44:2 (2014),  149–156
11. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode
    
    Kvantovaya Elektronika, 43:9 (2013),  824–827
12. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
    
    Kvantovaya Elektronika, 43:9 (2013),  822–823
13. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
    
    Kvantovaya Elektronika, 43:9 (2013),  819–821
14. Threshold, power, and spectral characteristics of a semiconductor emitter with a fiber Bragg grating
    
    Zhurnal Tekhnicheskoi Fiziki, 82:6 (2012),  63–68
15. Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard
    
    Kvantovaya Elektronika, 41:8 (2011),  692–696
16. Reliability estimate for semiconductor laser module ILPN-134
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  377–382
17. Refractive indices of solid AlGaInAs solutions
    
    Kvantovaya Elektronika, 37:6 (2007),  545–548
18. Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
    
    Kvantovaya Elektronika, 36:10 (2006),  918–924
19. Study of the spectral and power characteristics of superluminescent diodes
    
    Kvantovaya Elektronika, 34:1 (2004),  15–19
20. Effect of parasitic elements of a ridge laser on its modulation characteristic
    
    Kvantovaya Elektronika, 33:5 (2003),  425–429
21. Dynamics of emission from an (InGa)AsP heterolaser with two-channel lateral confinement
    
    Kvantovaya Elektronika, 16:7 (1989),  1329–1332
22. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
    
    Kvantovaya Elektronika, 16:3 (1989),  457–462