Kurnosov Vladimir Dmitrievich

Publications in Math-Net.Ru

1. Increasing the pump current range of a single-frequency laser diode tuned to the caesium D₂ line
   
   Kvantovaya Elektronika, 51:11 (2021),  970–975
2. Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide
   
   Kvantovaya Elektronika, 50:9 (2020),  816–821
3. On "incorrectness" of the rate equation for photon density of semiconductor lasers
   
   Kvantovaya Elektronika, 50:7 (2020),  688–693
4. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
   
   Kvantovaya Elektronika, 50:6 (2020),  600–602
5. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
   
   Kvantovaya Elektronika, 50:2 (2020),  143–146
6. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
   
   Kvantovaya Elektronika, 49:7 (2019),  649–652
7. AlGaInAs/InP semiconductor lasers with an increased electron barrier
   
   Kvantovaya Elektronika, 49:6 (2019),  519–521
8. Modelling the spectral characteristics of 1.5–1.6 μm high-power asymmetric-waveguide single-mode laser diodes
   
   Kvantovaya Elektronika, 48:9 (2018),  807–812
9. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
   
   Kvantovaya Elektronika, 48:6 (2018),  495–501
10. Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating
    
    Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  438–442
11. Analysis of reliability of semiconductor emitters with different designs of cavities
    
    Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016),  83–88
12. Anomalously high noise levels in a fibre Bragg grating semiconductor laser
    
    Kvantovaya Elektronika, 45:1 (2015),  11–14
13. Parameters of a laser diode with a fiber Bragg grating at different fiber lengths
    
    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  108–112
14. High-power pulse-emitting lasers in the 1.5–1.6 $\mu$m spectral region
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  100–103
15. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
    
    Kvantovaya Elektronika, 44:2 (2014),  149–156
16. Theoretical study of low-frequency noise and amplitude – frequency characteristics of a semiconductor laser with a fiber Bragg grating
    
    Kvantovaya Elektronika, 43:9 (2013),  828–837
17. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode
    
    Kvantovaya Elektronika, 43:9 (2013),  824–827
18. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
    
    Kvantovaya Elektronika, 43:9 (2013),  822–823
19. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
    
    Kvantovaya Elektronika, 43:9 (2013),  819–821
20. Threshold, power, and spectral characteristics of a semiconductor emitter with a fiber Bragg grating
    
    Zhurnal Tekhnicheskoi Fiziki, 82:6 (2012),  63–68
21. Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard
    
    Kvantovaya Elektronika, 41:8 (2011),  692–696
22. Reliability estimate for semiconductor laser module ILPN-134
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  377–382
23. Study of the parameters of a single-frequency laser for pumping cesium frequency standards
    
    Kvantovaya Elektronika, 38:4 (2008),  319–324
24. Refractive indices of solid AlGaInAs solutions
    
    Kvantovaya Elektronika, 37:6 (2007),  545–548
25. Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
    
    Kvantovaya Elektronika, 36:10 (2006),  918–924
26. Single-frequency tunable laser for pumping cesium frequency standards
    
    Kvantovaya Elektronika, 36:8 (2006),  741–744
27. Study of the spectral and power characteristics of superluminescent diodes
    
    Kvantovaya Elektronika, 34:1 (2004),  15–19
28. Effect of parasitic elements of a ridge laser on its modulation characteristic
    
    Kvantovaya Elektronika, 33:5 (2003),  425–429
29. Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
    
    Kvantovaya Elektronika, 32:4 (2002),  303–307
30. Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers
    
    Kvantovaya Elektronika, 24:9 (1997),  773–775
31. Spectral characteristics of single-frequency quantum-well heterolasers
    
    Kvantovaya Elektronika, 21:12 (1994),  1137–1140
32. Single-frequency GaAIAs/GaAs lasers
    
    Kvantovaya Elektronika, 21:3 (1994),  205–208
33. Dynamics of emission from a semiconductor laser with an external resonator
    
    Kvantovaya Elektronika, 19:9 (1992),  845–847
34. Strong amplitude modulation of the radiation emitted by buried mesa-structure heterolasers in a frequency band up to 5 GHz
    
    Kvantovaya Elektronika, 17:2 (1990),  218–221
35. Investigation of the characteristics of a single-frequency semiconductor laser with an external resonator
    
    Kvantovaya Elektronika, 17:1 (1990),  40–42
36. Investigation of the width of the emission line of single-frequency GaAlAs injection lasers
    
    Kvantovaya Elektronika, 13:5 (1986),  1070–1072
37. Investigation of low-frequency power fluctuations of AIGaAs injection lasers
    
    Kvantovaya Elektronika, 12:11 (1985),  2370–2373
38. Bistable cw injection heterolaser
    
    Kvantovaya Elektronika, 8:4 (1981),  880–882
39. Investigation of a two-component injection heterojunction laser
    
    Kvantovaya Elektronika, 7:11 (1980),  2489–2491
40. Eight-channel optical fiber communication line between computer units
    
    Kvantovaya Elektronika, 4:7 (1977),  1610–1613
41. Two-resonator quantum-optical systems
    
    Kvantovaya Elektronika, 4:1 (1977),  186–187
42. Investigation of transient stimulated emission from optically coupled lasers
    
    Kvantovaya Elektronika, 3:8 (1976),  1808–1811
43. Injection laser with two strongly coupled resonators
    
    Kvantovaya Elektronika, 1:1 (1974),  35–42


44. Errata to the article: Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
    
    Kvantovaya Elektronika, 32:6 (2002),  564