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Korol'kov V I

Publications in Math-Net.Ru

  1. Study of the spatial resolution of laser thermochemical technology for recording diffraction microstructures

    Kvantovaya Elektronika, 41:7 (2011),  631–636
  2. Dynamic characteristics of power pulsing GaAs/AlGaAs superluminescent light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  719–724
  3. STUDY OF THE SWITCHING STABILITY OF HIGH-VOLTAGE SUBNANOSECOND PHOTON-INJECTION SWITCHES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:10 (1992),  26–31
  4. Динамика излучения суперлюминесцентных светодиодов, выполненных на основе GaAs$-$AlGaAs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:15 (1991),  38–40
  5. Исследования планарных фотосопротивлений на основе InGaAs/InP со скрытым $p^{+}$-затвором

    Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  1969–1972
  6. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  7. CURRENT SHUTOFF OF THE CONTROL OF PHOTON-INJECTION PULSE THYRISTORS BASED ON HETEROSTRUCTURE

    Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989),  156–158
  8. Experimental observation of waveguide diffraction of light by Sezawa surface acoustic waves

    Kvantovaya Elektronika, 16:6 (1989),  1260–1263
  9. Исследование особенностей переноса носителей в гетероструктурах с тонкими активными областями

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1287–1290
  10. Расчет основных характеристик фотонно-инжекционного импульсного тиристора на основе гетероструктуры

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  413–418
  11. KINETICS OF PHOTOGRAPHIC FLOW IN ARSENIDE-GALLIUM STRUCTURES WITH THE BUILT-IN POTENTIAL BARRIER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1565–1570
  12. HIGH-VOLTAGE IMPULSE THYRISTORS ON THE BASIS OF WEAKLY ALLOYED ARSENIDE-GALLIUM

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  771–777
  13. Electric and Photoelectric Properties of $n^{+}{-}n^{0}{-}n^{+}$ Structures Based on GaAs with Metal Grid in the $n^0$ Range

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  981–983
  14. Removal of a Nonequilibrium Plasma from Short InP : Fe Photoresistors by an Electric Field

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  70–74
  15. Study of P-N-structures and P-N-P-N-structures based on nonalloyed gallium-phosphide layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1270–1274
  16. Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1089–1093
  17. On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1897–1900
  18. Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  677–682
  19. Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1281–1285
  20. Arsenide-gallium vertical field transistor with the hidden lock

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  183–186
  21. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  22. Study of GaAs-Based Vertical Field Controlled Phototransistors. Mechanism of Amplification and Kinetics of Photocurrent

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1731–1735
  23. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
  24. Study of Intrinsic Photoconduction in InP and InGaAs Epitaxial Layers

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1460–1463
  25. High-Voltage Photon-Injection Transistor Based on a Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  878–884
  26. Application of Electrooptical Effect for Studying Space-Charge Range of High-Voltage Gallium-Arsenide $p{-}n$ Structures

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  328–331
  27. Study of Injection Efficiency of $p{-}n$ Junctions Based on Lightly Doped GaAs

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  167–169
  28. Vertical photo-resistance based on $n^0-Ga\,As$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  800–803
  29. High-sensitive vertical field phototransistor based on $Ga\,As$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985),  89–93
  30. ARSENIDEGALLIUM FIELD-EFFECT TRANSISTORS WITH CONTROLLING P-N TRANSIENTS

    Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  859–862
  31. Исследование обратной ветви ВАХ высоковольтных $p{-}n$-структур на основе GaAs

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2029–2035
  32. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
  33. POWERFUL IMPULSE TRANSISTORS BASED ON GALLIUM ARSENIDES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  976–979
  34. STUDY OF WAVEGUIDE TEXTURED FILMS OF ZINC-OXIDE FOR PLANAR ACOUSTOOPTICAL PROPERTIES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:15 (1984),  922–925
  35. ARSENIDE-GALLIUM TRANSISTORS

    Zhurnal Tekhnicheskoi Fiziki, 53:4 (1983),  763–765
  36. Время жизни неравновесных носителей заряда в слабо легированных эпитаксиальных слоях GaAs

    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1953–1956
  37. Исследование транзисторов с оптической связью

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1618–1622
  38. Лавинные фотодиоды на основе твердых растворов полупроводниковых соединений A$^{\text{III}}$B$^{\text{V}}$

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  569–582
  39. Высокоэффективный фотодетектор для ультрафиолетового излучения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519
  40. Импульсные тиристоры на основе гетероструктур GaAs$-$AlGaAs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  652–655

  41. Errata to the article: Study of the spatial resolution of laser thermochemical technology for recording diffraction microstructures

    Kvantovaya Elektronika, 41:8 (2011),  721

© Steklov Math. Inst. of RAS, 2026