Davydova Evgeniya Ivanovna

Publications in Math-Net.Ru

1. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
   
   Kvantovaya Elektronika, 47:4 (2017),  291–293
2. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
3. Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode
   
   Kvantovaya Elektronika, 41:5 (2011),  423–426
4. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
   
   Kvantovaya Elektronika, 40:8 (2010),  697–699
5. 808-nm laser diode bars based on epitaxially stacked double heterostructures
   
   Kvantovaya Elektronika, 40:8 (2010),  682–684
6. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
   
   Kvantovaya Elektronika, 39:8 (2009),  723–726
7. High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
   
   Kvantovaya Elektronika, 39:1 (2009),  18–20
8. Single-mode ridge lasers fabricated in an inductively coupled plasma source
   
   Kvantovaya Elektronika, 34:9 (2004),  805–808
9. High-power single-transverse-mode ridge optical waveguide semiconductor lasers
   
   Kvantovaya Elektronika, 32:12 (2002),  1099–1104
10. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    
    Kvantovaya Elektronika, 31:8 (2001),  659–660
11. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction
    
    Kvantovaya Elektronika, 27:1 (1999),  1–2
12. Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region
    
    Kvantovaya Elektronika, 19:10 (1992),  1024–1031
13. Injection laser with a waveguide lens
    
    Kvantovaya Elektronika, 16:11 (1989),  2173–2176