RUS  ENG
Full version
PEOPLE

Cheshev Evgenii Anatol'evich

Publications in Math-Net.Ru

  1. Spectral dependence of bovine coronavirus photoinactivation under irradiation by UV-A, UV-B, and UV-C light-emitting diodes

    Kvantovaya Elektronika, 54:1 (2024),  63–66
  2. A disc-shaped composite ceramic active element with multipass and multichannel pumping

    Kvantovaya Elektronika, 53:12 (2023),  898–901
  3. Fabrication and study of generation characteristics of monolithic ceramic microchip Nd3+:YAG/Cr4+:YAG lasers

    Kvantovaya Elektronika, 53:9 (2023),  684–688
  4. New regime of diode laser operation: 200-ps front edge of a nanosecond pulse

    Kvantovaya Elektronika, 52:11 (2022),  1050–1053
  5. Inactivation of coronaviruses under irradiation by UVA-range light-emitting diodes

    Kvantovaya Elektronika, 52:1 (2022),  83–86
  6. Transverse mode locking of the Stokes component of a diode end-pumped Q-switched Nd : KGW laser

    Kvantovaya Elektronika, 51:7 (2021),  582–585
  7. Dual-wavelength Q-switched laser based on a lens-shaped Nd : YLF active element and a Cr4+ : YAG passive Q-switch

    Kvantovaya Elektronika, 49:2 (2019),  95–97
  8. Lasing characteristic of new Russian laser ceramics

    Kvantovaya Elektronika, 48:9 (2018),  802–806
  9. Modelling and experimental study of temperature profiles in cw laser diode bars

    Kvantovaya Elektronika, 48:2 (2018),  115–118
  10. Quasi-cw 808-nm 300-W laser diode arrays

    Kvantovaya Elektronika, 47:1 (2017),  5–6
  11. Spectral features and thermal resistance of 976-nm cw laser diodes with a power up to 15 W

    Kvantovaya Elektronika, 46:8 (2016),  679–681
  12. 980-nm, 15-W cw laser diodes on F-mount-type heat sinks

    Kvantovaya Elektronika, 45:12 (2015),  1088–1090
  13. Application of diode lasers in light-oxygen cancer therapy

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  129–134
  14. Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  114–119
  15. Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  109–113
  16. Thermal modelling of high-power laser diodes mounted using various types of submounts

    Kvantovaya Elektronika, 44:10 (2014),  899–902
  17. Emission parameters and thermal management of single high-power 980-nm laser diodes

    Kvantovaya Elektronika, 44:2 (2014),  145–148
  18. Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour deposition

    Kvantovaya Elektronika, 42:11 (2012),  959–960
  19. Symmetry of the spatial structure of radiation upon transverse mode locking in an astigmatic resonator laser

    Kvantovaya Elektronika, 39:8 (2009),  759–764
  20. Laser diodes emitting up to 25 W at 808 nm

    Kvantovaya Elektronika, 39:3 (2009),  241–243
  21. Modification of metal film structure by radiation from a diode-pumped solid-state laser for improving the output parameters of high-power laser diodes

    Kvantovaya Elektronika, 37:11 (2007),  1055–1059
  22. Highly efficient, compact diode-pumped acousto-optically Q-switched 1.064-μm Nd3+:YAG laser operating in cw and pulsed regimes

    Kvantovaya Elektronika, 35:6 (2005),  507–510


© Steklov Math. Inst. of RAS, 2026