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Bezotosnyi Viktor Vladimirovich

Publications in Math-Net.Ru

  1. Analysis of a device based on a multicore fiber with tapering cores for radiation summation in multichannel laser systems

    Kvantovaya Elektronika, 53:12 (2023),  905–911
  2. Thermoelastic stresses in high-power CW diode laser arrays assembled on CuW and AlN submounts

    Kvantovaya Elektronika, 52:5 (2022),  443–448
  3. Simulation of a two-dimensional laser diode array directly cooled by coolant flow

    Kvantovaya Elektronika, 51:3 (2021),  196–200
  4. Heating of aqueous suspensions of silicon nanoparticles by a 808-nm diode laser for application in local photohyperthermia

    Kvantovaya Elektronika, 50:2 (2020),  104–108
  5. Lasing characteristic of new Russian laser ceramics

    Kvantovaya Elektronika, 48:9 (2018),  802–806
  6. Effect of pumping level on the uniformity of the power and spectrum distributions over the emitting aperture of cw laser diode bars

    Kvantovaya Elektronika, 48:6 (2018),  502–505
  7. Modelling and experimental study of temperature profiles in cw laser diode bars

    Kvantovaya Elektronika, 48:2 (2018),  115–118
  8. Quasi-cw 808-nm 300-W laser diode arrays

    Kvantovaya Elektronika, 47:1 (2017),  5–6
  9. Spectral features and thermal resistance of 976-nm cw laser diodes with a power up to 15 W

    Kvantovaya Elektronika, 46:8 (2016),  679–681
  10. 980-nm, 15-W cw laser diodes on F-mount-type heat sinks

    Kvantovaya Elektronika, 45:12 (2015),  1088–1090
  11. Application of diode lasers in light-oxygen cancer therapy

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  129–134
  12. Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  114–119
  13. Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  109–113
  14. Thermal modelling of high-power laser diodes mounted using various types of submounts

    Kvantovaya Elektronika, 44:10 (2014),  899–902
  15. Emission parameters and thermal management of single high-power 980-nm laser diodes

    Kvantovaya Elektronika, 44:2 (2014),  145–148
  16. Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour deposition

    Kvantovaya Elektronika, 42:11 (2012),  959–960
  17. Symmetry of the spatial structure of radiation upon transverse mode locking in an astigmatic resonator laser

    Kvantovaya Elektronika, 39:8 (2009),  759–764
  18. Laser diodes emitting up to 25 W at 808 nm

    Kvantovaya Elektronika, 39:3 (2009),  241–243
  19. Modification of metal film structure by radiation from a diode-pumped solid-state laser for improving the output parameters of high-power laser diodes

    Kvantovaya Elektronika, 37:11 (2007),  1055–1059
  20. Highly efficient, compact diode-pumped acousto-optically Q-switched 1.064-μm Nd3+:YAG laser operating in cw and pulsed regimes

    Kvantovaya Elektronika, 35:6 (2005),  507–510
  21. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics

    Kvantovaya Elektronika, 31:8 (2001),  659–660
  22. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction

    Kvantovaya Elektronika, 27:1 (1999),  1–2
  23. Experimental investigation and simulation of the output characteristics of powerful cw diode lasers operating in the spectral range 808 nm with a total efficiency of up to 50%

    Kvantovaya Elektronika, 25:7 (1998),  611–615
  24. Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50%

    Kvantovaya Elektronika, 25:4 (1998),  303–304
  25. Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

    Kvantovaya Elektronika, 25:3 (1998),  225–228
  26. Ultimate output parameters of laser-diode bars and arrays

    Kvantovaya Elektronika, 24:6 (1997),  495–498
  27. Radiative characteristics of two-dimensional arrays of AlGaAs/GaAs diode lasers emitting at the wavelength 0.81 μm and intended to pump solid-state active elements

    Kvantovaya Elektronika, 23:11 (1996),  974–976
  28. Thermal conditions in high-power monolithic linear injection-laser arrays

    Kvantovaya Elektronika, 23:9 (1996),  775–778
  29. Modelling and experimental study of AlGaAs\/GaAs injection lasers with electron superlattice barriers, emitting at 780 — 808 nm

    Kvantovaya Elektronika, 22:3 (1995),  216–218
  30. Characteristics of the emission of 805 — 810 nm radiation by linear injection-laser arrays used to pump solid-state lasers

    Kvantovaya Elektronika, 22:2 (1995),  101–104
  31. Narrowing of the angular distribution of the radiation emitted by high-power injection lasers with a wide stripe contact by an external microselector

    Kvantovaya Elektronika, 21:1 (1994),  57–58
  32. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
  33. Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs

    Kvantovaya Elektronika, 8:9 (1981),  1994–1996
  34. Service life of GalnPAs/lnP heterostructures

    Kvantovaya Elektronika, 8:9 (1981),  1985–1987
  35. Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range

    Kvantovaya Elektronika, 7:9 (1980),  1990–1992

© Steklov Math. Inst. of RAS, 2026