Zabrodskii Vladimir Viktorovich

Publications in Math-Net.Ru

1. Modeling of processes of irradiation of Cr/4H-SiC structures with high-energy Ar ions
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1157–1163
2. 4H-SiC photodiodes with micronanostructured receiving surface
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  43–47
3. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
4. Effective ion charge of plasma $Z_{eff}$ determination by its X-ray spectrum region radiation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:24 (2024),  63–66
5. In memory of I.T. Serenkov. Silicon avalanche photodiode with photoresponse rise time less than 350 ps at wavelength 1064 nm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  15–18
6. Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev
   
   Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  562–567
7. Temperature dependence of dislocation-related electroluminescence in silicon light-emitting diodes containing oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  289–294
8. Application of RIE-technology to control responsivity of 4H-SiC photodiodes
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  997–1001
9. Silicon light-emitting diodes with dislocation-related luminescence fabricated with participation of oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  904–907
10. Irradiation with argon ions of Cr/4H-SiC-photodetectors
    
    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  254–258
11. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  3–6
12. Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks
    
    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1922–1929
13. Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
    
    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1386–1392
14. Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup
    
    Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020),  693–698
15. Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1368–1373
16. Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions
    
    Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1244–1248
17. Silicon light-emitting diodes with luminescence from (113) defects
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  580–584
18. Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  195–201
19. Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  856–861
20. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
21. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
22. Detection of UV radiation from extensive air showers: prospects for Cherenkov gamma-ray astronomy
    
    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1655–1666
23. Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project
    
    Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017),  803–821
24. Injection-induced terahertz electroluminescence from silicon $p$–$n$ structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  632–636
25. Absorption of the laser radiation by the laser plasma with gas microjet targets
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  53–60
26. Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
    
    Fizika Tverdogo Tela, 58:12 (2016),  2411–2414
27. Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  254–258
28. Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  250–253
29. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
30. Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  73–78
31. The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014),  38–44
32. Photoresponse of a silicon multipixel photon counter in the vacuum ultraviolet range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  23–29
33. Electromagnetic radiation sources based on a low-inductive extended $z$-discharge
    
    Zhurnal Tekhnicheskoi Fiziki, 83:2 (2013),  43–51
34. Photoresponse recovery in silicon photodiodes upon VUV irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  178–181
35. Utilization of silicon detectors with “ideal-diode” current-voltage characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  174–177
36. A study of vacuum-ultraviolet stability of silicon photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  69–77
37. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range
    
    Kvantovaya Elektronika, 42:10 (2012),  943–948
38. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438