Kozlovsky Vladimir Ivanovich

Publications in Math-Net.Ru

1. Полупроводниковый дисковый лазер на гетероструктуре GaInP/AlGaInP с внутрирезонаторной накачкой в квантовые ямы
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 122:4 (2025),  201–207
2. Pulse 2.77-$\mu$m Cr$^{2+}$:CdSe laser with an output energy of 1.2 J
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:2 (2025),  22–25
3. A powerful laser on a CdSSe crystal with a radiation wavelength of 623.5 nm under longitudinal two-photon pumping
   
   Kvantovaya Elektronika, 55:2 (2025),  69–75
4. Determination of the diffusion length of nonequilibrium carriers in CdS/ZnSe/ZnSSe heterostructures designed for semiconductor disk lasers
   
   Kvantovaya Elektronika, 54:2 (2024),  89–94
5. High-power pulsed, in-well-pumped InGaP/AlGaInP heterostructure, semiconductor disk laser
   
   Kvantovaya Elektronika, 53:12 (2023),  891–897
6. Femtosecond Cr²⁺:ZnSe laser with mode-locking based on carbon nanotubes
   
   Kvantovaya Elektronika, 53:11 (2023),  867–872
7. Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with Al_xGa_1-xAs/Al_yGa_1-yAs quantum wells under optical pumping with different radiation wavelengths
   
   Kvantovaya Elektronika, 53:8 (2023),  636–640
8. Intensity noise and pulse repetition frequency stability measurements of a passive mode-locked Cr:ZnSe laser
   
   Optics and Spectroscopy, 130:4 (2022),  564–568
9. Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al_xGa_1–xAs/Al_yGa_1–yAs heterostructure with optical and electron beam pumping
   
   Kvantovaya Elektronika, 52:4 (2022),  362–366
10. Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode
    
    Kvantovaya Elektronika, 52:4 (2022),  359–361
11. Nanosecond semiconductor disk laser emitting at 496.5 nm
    
    Kvantovaya Elektronika, 50:10 (2020),  895–899
12. Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
    
    Kvantovaya Elektronika, 50:7 (2020),  683–687
13. Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
    
    Kvantovaya Elektronika, 49:10 (2019),  909–912
14. Thermoelectrically cooled, repetitively pulsed Fe : ZnSe laser
    
    Kvantovaya Elektronika, 49:7 (2019),  641–648
15. Paramagnetic complexes in zinc selenide crystals with iron admixture
    
    Fizika Tverdogo Tela, 60:7 (2018),  1365–1369
16. Nanosecond room-temperature Fe : ZnSe laser pumped inside the resonator of a transversely diode-pumped Er : YLF laser
    
    Kvantovaya Elektronika, 48:8 (2018),  686–690
17. Paramagnetic defects in ZnSe crystals doped with iron ions
    
    Fizika Tverdogo Tela, 59:10 (2017),  1970–1977
18. Efficient operation of a room-temperature Fe²⁺ : ZnSe laser pumped by a passively Q-switched Er : YAG laser
    
    Kvantovaya Elektronika, 47:9 (2017),  831–834
19. Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  108–113
20. Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  700–705
21. Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  9–16
22. Study of the formation of a microrelief on ZnSe- and CdSe-crystal surfaces ablated by excimer KrF-laser radiaton
    
    Kvantovaya Elektronika, 46:10 (2016),  903–910
23. Room-temperature Fe²⁺ : ZnS single crystal laser pumped by an electric-discharge HF laser
    
    Kvantovaya Elektronika, 46:9 (2016),  769–771
24. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes
    
    Kvantovaya Elektronika, 45:1 (2015),  1–7
25. Photoinduced charge redistribution and its influence on excitonic states in Zn(Cd)Se/ZnMgSSe/GaAs quantum-well heterostructures
    
    Fizika Tverdogo Tela, 56:4 (2014),  769–778
26. Intracavity laser spectroscopy with a semiconductor disk laser-pumped cw Cr²⁺ : ZnSe laser
    
    Kvantovaya Elektronika, 43:9 (2013),  885–889
27. Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser
    
    Kvantovaya Elektronika, 42:7 (2012),  583–587
28. Observation of saturated dispersion resonances of methane in a two-mode Cr²⁺ : ZnSe/CH₄ laser
    
    Kvantovaya Elektronika, 42:7 (2012),  565–566
29. Tunable two-mode Cr²⁺ : ZnSe laser with a frequency-noise spectral density of 0.03 Hz Hz^-1/2
    
    Kvantovaya Elektronika, 42:6 (2012),  509–513
30. Modelling of a diode laser with a resonant grating of quantum wells and an external mirror
    
    Kvantovaya Elektronika, 41:9 (2011),  769–775
31. Pulsed Fe²⁺:ZnS laser continuously tunable in the wavelength range of 3.49 — 4.65 μm
    
    Kvantovaya Elektronika, 41:1 (2011),  1–3
32. Formation of three-dimensional ZnSe-based semiconductor nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  75–78
33. Continuous-wave Cr²⁺:CdS laser
    
    Kvantovaya Elektronika, 40:1 (2010),  7–10
34. Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser
    
    Kvantovaya Elektronika, 39:11 (2009),  1028–1032
35. Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror
    
    Kvantovaya Elektronika, 39:8 (2009),  731–734
36. A continuous-wave Fe²⁺:ZnSe laser
    
    Kvantovaya Elektronika, 38:12 (2008),  1113–1116
37. A Cr²⁺:CdS laser tunable between 2.2 and 3.3 μm
    
    Kvantovaya Elektronika, 38:9 (2008),  803–804
38. Efficient pulsed Cr²⁺:CdSe laser continuously tunable in the spectral range from 2.26 to 3.61 μm
    
    Kvantovaya Elektronika, 38:3 (2008),  205–208
39. Intracavity laser spectroscopy by using a Fe²⁺:ZnSe laser
    
    Kvantovaya Elektronika, 37:11 (2007),  1071–1075
40. Efficient cw lasing in a Cr²⁺:CdSe crystal
    
    Kvantovaya Elektronika, 37:11 (2007),  991–992
41. A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region
    
    Kvantovaya Elektronika, 37:9 (2007),  857–862
42. Laser cathode-ray tube with a monolithic laser screen
    
    Kvantovaya Elektronika, 37:9 (2007),  853–856
43. Efficient lasing in a Fe²⁺:ZnSe crystal at room temperature
    
    Kvantovaya Elektronika, 36:4 (2006),  299–301
44. Passive Fe²⁺:ZnSe single-crystal Q switch for 3-μm lasers
    
    Kvantovaya Elektronika, 36:1 (2006),  1–2
45. Laser parameters of a Fe:ZnSe crystal in the 85–255-K temperature range
    
    Kvantovaya Elektronika, 35:9 (2005),  809–812
46. Spectral dynamics of intracavity absorption in a pulsed Cr²⁺:ZnSe laser
    
    Kvantovaya Elektronika, 35:5 (2005),  425–428
47. Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain
    
    Kvantovaya Elektronika, 34:10 (2004),  919–923
48. Efficient IR Fe:ZnSe laser continuously tunable in the spectral range from 3.77 to 4.40 μm
    
    Kvantovaya Elektronika, 34:10 (2004),  912–914
49. Intracavity laser spectroscopy using a Cr²⁺ : ZnSe laser
    
    Kvantovaya Elektronika, 34:2 (2004),  185–188
50. Efficient lasing of a Cr²⁺ : ZnSe crystal grown from a vapour phase
    
    Kvantovaya Elektronika, 33:5 (2003),  408–410
51. Threshold and efficiency of a laser cathode-ray tube at room temperature
    
    Kvantovaya Elektronika, 33:1 (2003),  48–56
52. Temperature regime of the laser screen of a cathode-ray tube
    
    Kvantovaya Elektronika, 32:4 (2002),  297–302
53. Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy
    
    Kvantovaya Elektronika, 25:4 (1998),  305–307
54. Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice
    
    Kvantovaya Elektronika, 22:8 (1995),  756–758
55. CdS_xSe_1–x/CdS heterostructures in longitudinally electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 14:10 (1987),  1994–1997
56. Highly efficient semiconductor laser with longitudinal pumping of gallium arsenide by a scanning electron beam
    
    Kvantovaya Elektronika, 14:1 (1987),  170–176
57. Saturation of the cathodoluminescence associated with isoelectronic $\mathrm{Te}$ impurity in $\mathrm{CdS}_{1-x}\mathrm{Te}_{x}$ and $\mathrm{ZnS}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.05)$ under high excitation levels
    
    Fizika Tverdogo Tela, 28:11 (1986),  3313–3318
58. Localized exciton luminescence in $\mathrm{ZnS}_{1-x}\mathrm{Se}_{x}$ solid solution
    
    Fizika Tverdogo Tela, 27:9 (1985),  2756–2759
59. $\mathrm{Te}_{n}$-clusters–centers of effective radiative recombination in $\mathrm{ZnSe}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.2)$
    
    Fizika Tverdogo Tela, 27:6 (1985),  1734–1741
60. Single crystals of ZnSe_1–xTe_x, Zn_1–xCd_xSe, and Zn_xCd_1–xS solid solutions for electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 12:5 (1985),  1113–1116
61. Scanned and cw GaSb lasers with longitudinal electron beam pumping
    
    Kvantovaya Elektronika, 12:4 (1985),  845–848
62. Ultraviolet ZnS semiconductor laser pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 11:3 (1984),  618–621
63. Use of a point cathode made of LaB₆ in a laser cathode-ray tube
    
    Kvantovaya Elektronika, 10:8 (1983),  1699–1700
64. Investigation of cw operation of a GaAs laser pumped by an electron beam
    
    Kvantovaya Elektronika, 9:11 (1982),  2211–2216
65. Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 9:10 (1982),  2099–2102
66. Influence of the electron–phonon interaction on the absorption and stimulated emission processes in CdS
    
    Kvantovaya Elektronika, 9:4 (1982),  806–810
67. Influence of dislocations on the characteristics of laser screens made of CdS
    
    Kvantovaya Elektronika, 8:4 (1981),  745–750
68. Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube
    
    Kvantovaya Elektronika, 7:7 (1980),  1585–1588
69. Formation of a television image with the aid of a laser electron-beam tube under line scanning conditions
    
    Kvantovaya Elektronika, 2:7 (1975),  1587–1588
70. Formation of a television image on a large screen with the aid of a laser electron-beam tube
    
    Kvantovaya Elektronika, 1:11 (1974),  2521–2523
71. Laser screen made of bulk cadmium sulfide and selenide single crystals
    
    Kvantovaya Elektronika, 1:9 (1974),  2083–2085
72. Electron-beam tube with a laser screen
    
    Kvantovaya Elektronika, 1:3 (1974),  534–541
73. Use of a cathode-ray tube with a semiconductor laser screen for recording of phase holograms in photoolastic materials
    
    Kvantovaya Elektronika, 1:1 (1974),  193–195
74. Recording of holograms using a cathode-ray tube with a laser screen
    
    Kvantovaya Elektronika, 1:1 (1974),  158–159
75. Reconstruction of a holographic image with radiation produced by a semiconductor laser screen
    
    Kvantovaya Elektronika, 1:1 (1974),  84–90


76. Errata to the article: Temperature regime of the laser screen of a cathode-ray tube
    
    Kvantovaya Elektronika, 32:6 (2002),  564
77. Erratum: Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [Quantum Electronics 28 (4) 294 - 296 (1998)]
    
    Kvantovaya Elektronika, 25:6 (1998),  576