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Yakubovich Sergei Dmitrievich

Publications in Math-Net.Ru

  1. Tunable low-coherence light source with high spectral brightness

    Kvantovaya Elektronika, 51:4 (2021),  287–292
  2. Tunable semiconductor laser with two acousto-optic tunable filters in its external cavity

    Kvantovaya Elektronika, 50:2 (2020),  136–140
  3. Superluminescent diodes based on asymmetric double-quantum-well heterostructures

    Kvantovaya Elektronika, 49:10 (2019),  931–935
  4. Superluminescent diodes of the 770–790-nm range based on semiconductor nanostructures with narrow quantum wells

    Kvantovaya Elektronika, 49:9 (2019),  810–813
  5. Tunable laser based on a semiconductor optical amplifier of red spectral region

    Kvantovaya Elektronika, 49:5 (2019),  493–496
  6. Highly efficient red single transverse mode superluminescent diodes

    Kvantovaya Elektronika, 47:12 (2017),  1154–1157
  7. Parametric amplification of broadband radiation of a cw superluminescent diode under picosecond pumping

    Kvantovaya Elektronika, 46:9 (2016),  811–814
  8. Highly reliable high-power superluminescent diodes with three single-mode active channels

    Kvantovaya Elektronika, 46:7 (2016),  594–596
  9. Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

    Kvantovaya Elektronika, 45:8 (2015),  697–700
  10. Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW

    Kvantovaya Elektronika, 44:10 (2014),  903–906
  11. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    Kvantovaya Elektronika, 43:11 (2013),  994–998
  12. Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm

    Kvantovaya Elektronika, 43:8 (2013),  751–756
  13. Nearest-IR superluminescent diodes with a 100-nm spectral width

    Kvantovaya Elektronika, 42:11 (2012),  961–963
  14. Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm

    Kvantovaya Elektronika, 41:8 (2011),  677–680
  15. Variations in the output characteristics of broadband superluminescent diodes during long-term operation

    Kvantovaya Elektronika, 41:7 (2011),  595–601
  16. Highly efficient semiconductor optical amplifier for the 820—860-nm spectral range

    Kvantovaya Elektronika, 40:4 (2010),  305–309
  17. Narrow-band double-pass superluminescent diodes emitting at 1060 nm

    Kvantovaya Elektronika, 39:9 (2009),  793–796
  18. Two-section broadband superluminescent diodes

    Kvantovaya Elektronika, 39:5 (2009),  421–424
  19. Broadband near-IR double quantum-well heterostructure superluminescent diodes

    Kvantovaya Elektronika, 38:8 (2008),  744–746
  20. Semiconductor optical amplifiers for the 1000—1100-nm spectral range

    Kvantovaya Elektronika, 38:7 (2008),  661–664
  21. High-power multimode superluminescent diode emitting at 840 nm

    Kvantovaya Elektronika, 37:11 (2007),  996–1000
  22. Effect of optical feedback on the output parameters of quantum-well superluminescent diodes

    Kvantovaya Elektronika, 37:5 (2007),  443–445
  23. Quantum-dot superluminescent diodes with improved performance

    Kvantovaya Elektronika, 37:4 (2007),  331–333
  24. Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100—1230-nm spectral range

    Kvantovaya Elektronika, 36:6 (2006),  527–531
  25. Tunable semiconductor laser with an acousto-optic filter in an external fibre cavity

    Kvantovaya Elektronika, 36:4 (2006),  324–328
  26. High-power broadband superluminescent diodes emitting in the 1000–1100-nm spectral range

    Kvantovaya Elektronika, 36:4 (2006),  315–318
  27. Lifetime tests of superluminescent diodes

    Kvantovaya Elektronika, 36:2 (2006),  111–113
  28. Multichannel extremely broadband near-IR radiation sources for optical coherence tomography

    Kvantovaya Elektronika, 35:7 (2005),  667–669
  29. Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier

    Kvantovaya Elektronika, 35:6 (2005),  504–506
  30. Broadband light source based on quantum-well superluminescent diodes for high-resolution optical coherence tomography

    Kvantovaya Elektronika, 34:10 (2004),  915–918
  31. High-power superluminescent diodes with non-injection output sections

    Kvantovaya Elektronika, 34:3 (2004),  209–212
  32. Double-pass superluminescent multilayer quantum-well (GaAl)As heterostructure diodes with a reduced power consumption

    Kvantovaya Elektronika, 34:3 (2004),  206–208
  33. Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm

    Kvantovaya Elektronika, 33:6 (2003),  511–514
  34. Superbroadband high-power superluminescent diode emitting at 920 nm

    Kvantovaya Elektronika, 33:6 (2003),  471–473
  35. Analysis of the emission parameters of low-power superluminescent diodes in the temperature range from -55°C to +93°C

    Kvantovaya Elektronika, 32:7 (2002),  593–596
  36. Double-pass superluminescent diode with tapered active channel

    Kvantovaya Elektronika, 32:2 (2002),  112–114
  37. On the feasibility of raising the density and the extension of atomic ensembles in laser cooling

    Kvantovaya Elektronika, 30:11 (2000),  1027–1030
  38. Picosecond semiconductor lasers with an external fibre resonator

    Kvantovaya Elektronika, 30:2 (2000),  158–160
  39. Passive mode locking in a multisegment laser diode with an external cavity

    Kvantovaya Elektronika, 26:2 (1999),  103–108
  40. Generation of picosecond visible pulses in an inhomogeneously excited (GaIn)P heterolaser

    Kvantovaya Elektronika, 23:8 (1996),  699–700
  41. Emission dynamics of a multifunctional three-section heterolaser

    Kvantovaya Elektronika, 23:2 (1996),  125–129
  42. Superluminescent diodes based on single-quantum-well (GaAl)As heterostructures

    Kvantovaya Elektronika, 23:2 (1996),  113–118
  43. Spectral characteristics of single-frequency quantum-well heterolasers

    Kvantovaya Elektronika, 21:12 (1994),  1137–1140
  44. Generation of high-energy subnanosecond light pulses through direct current modulation of heterostructure lasers

    Kvantovaya Elektronika, 20:8 (1993),  758–760
  45. Direct amplitude modulation of the radiation emitted by (InGa)AsP/InP double-heterostructure lasers (λ = 1.3 μm) with separate confinement

    Kvantovaya Elektronika, 18:3 (1991),  281–286
  46. Direct pulse-code modulation of high-power heterolaser radiation

    Kvantovaya Elektronika, 17:10 (1990),  1383–1384
  47. Strong amplitude modulation of the radiation emitted by buried mesa-structure heterolasers in a frequency band up to 5 GHz

    Kvantovaya Elektronika, 17:2 (1990),  218–221
  48. Phase-locked integrated arrays of injection lasers

    Kvantovaya Elektronika, 16:10 (1989),  1957–1994
  49. Time substructure of picosecond pulses emitted by heterolasers with spatially inhomogeneous injection

    Kvantovaya Elektronika, 16:8 (1989),  1713–1715
  50. Recording of a subpicosecond time structure of output radiation pulses obtained from heterolasers with a nonlinear absorber

    Kvantovaya Elektronika, 16:7 (1989),  1305–1307
  51. Spectrometer based on injection lasers emitting near-infrared radiation

    Kvantovaya Elektronika, 16:4 (1989),  853–857
  52. Динамика излучения гетеролазера с насыщающимся поглотителем, полученным глубокой имплантацией ионов кислорода

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1208–1212
  53. Dependence of the current coefficient of frequency modulation of single-mode semiconductor lasers on the constant injection current and on the frequency of the modulating signal

    Kvantovaya Elektronika, 15:11 (1988),  2318–2322
  54. Heating of electrons in an injection semiconductor laser

    Kvantovaya Elektronika, 15:4 (1988),  695–701
  55. Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1059–1062
  56. Conditions for generation and dynamic parameters of single picosecond radiation pulses emitted by a heterojunction laser

    Kvantovaya Elektronika, 14:10 (1987),  1981–1983
  57. Phase-locked generation of radiation with the aid of a regular array of active symmetric mesastripe couplers based on AlGaAs/GaAs double heterostructures

    Kvantovaya Elektronika, 14:9 (1987),  1737–1738
  58. Generation of single optical pulses of less than 10 psec duration in a two-section heterojunction laser

    Kvantovaya Elektronika, 14:7 (1987),  1370–1372
  59. Transient process in an injection laser with a non-quasi-Fermi electron distribution function

    Kvantovaya Elektronika, 14:1 (1987),  71–75
  60. Optical signal with high-frequency amplitude beats formed in a frequencymodulated injection laser and an interferometer

    Kvantovaya Elektronika, 13:11 (1986),  2359–2361
  61. Analog frequency modulation of radiation emitted by single-mode heterojunction lasers in the spectral range 1.3μ

    Kvantovaya Elektronika, 13:6 (1986),  1267–1269
  62. Modulation of the emission frequency of a single-mode homojunction laser by an injection current

    Kvantovaya Elektronika, 13:3 (1986),  606–611
  63. Regeneration and registration of picosecond optical pulses during straight current modulations of injection heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:14 (1985),  862–865
  64. Optical amplification in an (InGa)AsP heterostructure in the spectral range 1.3 μ

    Kvantovaya Elektronika, 12:6 (1985),  1316–1317
  65. Amplitude modulation of single-frequency injection laser radiation by a harmonic current signal

    Kvantovaya Elektronika, 12:6 (1985),  1314–1316
  66. High-frequency amplitude noise of stripe injection lasers

    Kvantovaya Elektronika, 12:5 (1985),  1116–1118
  67. Control of spiky emission from a two-component heterojunction laser

    Kvantovaya Elektronika, 12:5 (1985),  953–958
  68. Narrow-band picosecond parametric oscillator with injection of frequency-tunable semiconductor laser radiation

    Kvantovaya Elektronika, 12:2 (1985),  403–404
  69. Frequency modulation of radiation from a two-section injection laser with a coupled resonator

    Kvantovaya Elektronika, 11:9 (1984),  1859–1862
  70. Injection traveling-wave laser amplifier based on a (GaAI)As double heterostructure

    Kvantovaya Elektronika, 11:2 (1984),  375–381
  71. OBSERVATION OF MAGNETIC-RESONANCE SIGNALS WITH THE AID OF LINEARLY-POLARIZED RADIATION OF RETUNABLE INJECTION-LASER

    Zhurnal Tekhnicheskoi Fiziki, 53:6 (1983),  1222–1224
  72. Optically controlled two-component heterojunction laser

    Kvantovaya Elektronika, 10:12 (1983),  2498–2500
  73. Two-component spatially inhomogeneous (GaAl)As heterojunction laser

    Kvantovaya Elektronika, 10:7 (1983),  1332–1337
  74. Influence of thermal processes on the threshold characteristics of a heterojunction laser with spatially inhomogeneous injection

    Kvantovaya Elektronika, 10:5 (1983),  1030–1033
  75. Magnetic resonance of cesium atoms in the case of optical pumping by radiation from a single-mode injection laser

    Kvantovaya Elektronika, 10:3 (1983),  631–633
  76. Spectral gain profile of a GaAlAs injection heterolaser

    Kvantovaya Elektronika, 10:3 (1983),  598–602
  77. Prethreshold optical coupling between parts of a spatially inhomogeneous injection laser

    Kvantovaya Elektronika, 9:11 (1982),  2310–2313
  78. Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristics

    Kvantovaya Elektronika, 9:6 (1982),  1264–1267
  79. Profile of the cesium D2 line observed using a semiconductor laser

    Kvantovaya Elektronika, 9:2 (1982),  386–388
  80. Regular integrated array of stripe injection lasers

    Kvantovaya Elektronika, 8:10 (1981),  2216–2218
  81. Dynamic characteristics of a GaAs injection amplifier

    Kvantovaya Elektronika, 8:5 (1981),  1095–1098
  82. Bistable cw injection heterolaser

    Kvantovaya Elektronika, 8:4 (1981),  880–882
  83. Investigation of a two-component injection heterojunction laser

    Kvantovaya Elektronika, 7:11 (1980),  2489–2491
  84. Steady-state characteristics of a $GaAs$ injection quantum amplifier receiving a narrow-band input signal

    Kvantovaya Elektronika, 7:11 (1980),  2460–2466
  85. Continuous-wave single-mode stimulated emission from a semiconductor injection laser with a nonselective resonator

    Kvantovaya Elektronika, 7:6 (1980),  1252–1256
  86. Thin-film laser with a two-dimensional diffraction grating

    Kvantovaya Elektronika, 6:4 (1979),  838–841
  87. Amplification of a narrow-band optical signal in an active waveguide

    Kvantovaya Elektronika, 5:8 (1978),  1841–1843
  88. Investigation of a thin-film grating filter under oblique-incidence conditions

    Kvantovaya Elektronika, 4:9 (1977),  2025–2029
  89. Lasers with distributed feedback (review)

    Kvantovaya Elektronika, 2:11 (1975),  2373–2398
  90. Gallium arsenide electron-beam-pumped laser with a distributed feedback

    Kvantovaya Elektronika, 2:9 (1975),  1957–1962
  91. Extraction of radiation from an electron-beam-excited semiconductor laser through a diffraction grating

    Kvantovaya Elektronika, 2:3 (1975),  621–622
  92. Semiconductor laser with a distributed feedback

    Kvantovaya Elektronika, 2:1 (1975),  163–165
  93. Calculation of steady-state characteristics of a many-resonator injection laser

    Kvantovaya Elektronika, 1:1 (1974),  173–176
  94. Investigation of a multibeam semiconductor laser with an emitting array

    Kvantovaya Elektronika, 1:1 (1974),  169–172

© Steklov Math. Inst. of RAS, 2026