Yarotskaya Irina Valentinovna

Publications in Math-Net.Ru

1. Tunable quantum cascade laser for methane concentration measurement
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  66–70
2. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
3. High-power tunable quantum-cascade laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  65–68
4. Switching (turn-on) dynamics of low-voltage InP homothyristors
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  295–300
5. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
6. Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with Al_xGa_1-xAs/Al_yGa_1-yAs quantum wells under optical pumping with different radiation wavelengths
   
   Kvantovaya Elektronika, 53:8 (2023),  636–640
7. Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al_xGa_1–xAs/Al_yGa_1–yAs heterostructure with optical and electron beam pumping
   
   Kvantovaya Elektronika, 52:4 (2022),  362–366
8. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
   
   Kvantovaya Elektronika, 52:2 (2022),  179–181
9. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
10. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
    
    Kvantovaya Elektronika, 51:10 (2021),  905–908
11. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
    
    Kvantovaya Elektronika, 51:4 (2021),  283–286
12. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
    
    Kvantovaya Elektronika, 51:2 (2021),  133–136
13. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
    
    Kvantovaya Elektronika, 50:5 (2020),  489–492
14. Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
    
    Kvantovaya Elektronika, 49:10 (2019),  909–912
15. Laser emitters ($\lambda$ = 808 nm) based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  120–124
16. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
    
    Kvantovaya Elektronika, 43:10 (2013),  895–897
17. High-power cw laser bars of the 750 – 790-nm wavelength range
    
    Kvantovaya Elektronika, 43:6 (2013),  509–511
18. Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 42:1 (2012),  15–17
19. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
20. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  697–699
21. 808-nm laser diode bars based on epitaxially stacked double heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  682–684


22. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis
    
    UFN, 194:1 (2024),  98–105