Ryaboshtan Yurii Leonidovich

Publications in Math-Net.Ru

1. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
2. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
3. Features of high-power uni-traveling-carrier InGaAs/InP photodiodes
   
   Kvantovaya Elektronika, 53:11 (2023),  883–886
4. New high-reliability optical transmission modules based on powerful superluminescent diodes in the spectral range 1.5 – 1.6 μm
   
   Kvantovaya Elektronika, 53:7 (2023),  561–564
5. Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes
   
   Kvantovaya Elektronika, 52:6 (2022),  577–579
6. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
   
   Kvantovaya Elektronika, 51:10 (2021),  909–911
7. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
   
   Kvantovaya Elektronika, 51:4 (2021),  283–286
8. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
   
   Kvantovaya Elektronika, 51:2 (2021),  133–136
9. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
   
   Kvantovaya Elektronika, 50:12 (2020),  1123–1125
10. Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
    
    Kvantovaya Elektronika, 50:9 (2020),  830–833
11. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
    
    Kvantovaya Elektronika, 50:6 (2020),  600–602
12. AlGaInAs/InP semiconductor lasers with an increased electron barrier
    
    Kvantovaya Elektronika, 49:6 (2019),  519–521
13. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
14. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
    
    Kvantovaya Elektronika, 48:3 (2018),  197–200
15. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
    
    Kvantovaya Elektronika, 47:3 (2017),  272–274
16. High-power pulse-emitting lasers in the 1.5–1.6 $\mu$m spectral region
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  100–103
17. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
    
    Kvantovaya Elektronika, 43:9 (2013),  822–823
18. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
    
    Kvantovaya Elektronika, 43:9 (2013),  819–821
19. High-power cw laser bars of the 750 – 790-nm wavelength range
    
    Kvantovaya Elektronika, 43:6 (2013),  509–511
20. An 8-μm quantum cascade laserproduced by the metalorganic vapour phase epitaxy method
    
    Kvantovaya Elektronika, 40:2 (2010),  95–97
21. Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures
    
    Kvantovaya Elektronika, 39:3 (2009),  247–250
22. Refractive indices of solid AlGaInAs solutions
    
    Kvantovaya Elektronika, 37:6 (2007),  545–548
23. Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
    
    Kvantovaya Elektronika, 36:10 (2006),  918–924
24. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range
    
    Kvantovaya Elektronika, 35:10 (2005),  909–911