Asryan Levon Volodyaevich

Publications in Math-Net.Ru

1. Charge neutrality in semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  500–504
2. Analysis of stability of generation in quantum well lasers
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  684–692
3. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
4. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
5. Parasitic recombination in a laser with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
6. Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics
   
   Kvantovaya Elektronika, 49:6 (2019),  522–528
7. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
8. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
9. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
10. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
11. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
12. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure
    
    Kvantovaya Elektronika, 46:9 (2016),  777–781
13. Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1553–1557
14. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960
15. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
16. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes
    
    Kvantovaya Elektronika, 44:9 (2014),  801–805
17. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells
    
    Kvantovaya Elektronika, 43:5 (2013),  428–432
18. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
19. Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1067–1073
20. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
21. Capture of charge carriers and output power of a quantum well laser
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1553–1559
22. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546
23. Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures
    
    Kvantovaya Elektronika, 35:12 (2005),  1117–1120