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Kuchinskii Vladimir Il'ich

Publications in Math-Net.Ru

  1. Формирование твердых растворов InPAs методом твердофазного замещения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  49–52
  2. Tunable quantum cascade laser for methane concentration measurement

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  66–70
  3. The effect of the pump pulse duration and duty cycle on the power characteristics of quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  54–58
  4. High-power tunable quantum-cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  65–68
  5. Solid-phase substitution processes with phosphorus in InAs and InSb

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  20–22
  6. Obtaining anisotypic heterostructures for a GaSb-based photovoltaic converter due to solid-phase substitution reactions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  3–5
  7. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range

    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
  8. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
  9. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
  10. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm

    Kvantovaya Elektronika, 50:11 (2020),  989–994
  11. 10-W 4.6-μm quantum cascade lasers

    Kvantovaya Elektronika, 50:8 (2020),  720–721
  12. High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region

    Kvantovaya Elektronika, 50:2 (2020),  141–142
  13. Generation of droplet quasi-Bessel beams using a semiconductor laser

    Optics and Spectroscopy, 127:5 (2019),  781–786
  14. The effect of active region heating on dynamic and power characteristics of quantum cascade lasers emitting at a wavelength of 4.8 $\mu$m at room temperature

    Optics and Spectroscopy, 127:3 (2019),  445–448
  15. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
  16. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
  17. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
  18. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
  19. High-coupling distributed feedback lasers for the 1.55 μm spectral region

    Kvantovaya Elektronika, 49:9 (2019),  801–803
  20. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m

    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
  21. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
  22. A material for difference-frequency generation of terahertz radiation

    Optics and Spectroscopy, 125:4 (2018),  560–563
  23. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range

    Optics and Spectroscopy, 125:3 (2018),  387–390
  24. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
  25. Generation of droplet bessel beams using a semiconductor laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  72–78
  26. Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate

    Kvantovaya Elektronika, 48:8 (2018),  717–719
  27. Photonic-crystal waveguide for the second-harmonic generation

    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
  28. Generation of high-power ultrashort optical pulses using a semiconductor laser with controlled current pumping

    Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1887–1891
  29. Peaking of optical pulses in vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  17–23
  30. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
  31. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
  32. Generation of high-power ultrashort optical pulses by semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:24 (2016),  1–8
  33. Metamaterial for efficient second harmonic generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  40–48
  34. Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  984–988
  35. Manipulation of microparticles using Bessel beams from semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:11 (2014),  53–59
  36. Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013),  49–53
  37. Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers

    Kvantovaya Elektronika, 43:5 (2013),  423–427
  38. AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  66–74
  39. Effect of gain saturation on the current-power characteristic of semiconductor laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:13 (2012),  35–40
  40. Properties of narrow-bandgap (0.3–0.48 eV) A$^3$B$^5$ solid solution epilayers grown by metal-organic chemical vapor deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  23–30
  41. Superfocusing of mutimode semiconductor lasers and light-emitting diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  8–14
  42. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49
  43. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  22–30
  44. Генерация пикосекундных (${\tau=1.7}$ пс) импульсов излучения в InGaAsP/InP (${\lambda=1.535}$ мкм) гетеролазере со сверхбыстрым насыщающимся поглотителем

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:3 (1992),  38–41
  45. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
  46. HIGH-SPEED PROPERTIES OF INGAASP-INP (LAMBDA=1.55 MU-M) ROS-LASERS WITH SHORT-WAVE TUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  61–65
  47. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
  48. INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  58–62
  49. Поляризационные характеристики излучения РОС лазеров с деформированным активным слоем

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1207–1213
  50. EFFECT OF THE SATURATING ABSORBER DOMAIN ON CHARACTERISTICS OF INGAASP/INP DFB-LASERS WITH STRONG SHORT-WAVE DETUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  47–51
  51. GENERATION AND REGISTRATION OF PICOSECOND OPTICAL PULSES IN INGAASP/INP (LAMBDA= 1.5-1.6 MU-M) LASERS WITH PASSIVE QUALITY MODULATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  6–9
  52. INTERIOR GENERATION OF 2-ND HARMONICS IN INGAASP/INP (LAMBDA=1,55 MU-M) SEPARATE CONFINEMENT LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  67–72
  53. DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A COMPOUND ACTIVE LAYER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1082–1088
  54. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
  55. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

    Kvantovaya Elektronika, 15:11 (1988),  2196–2198
  56. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
  57. Spike regime in distributed feedback heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  601–604
  58. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
  59. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146
  60. Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1222–1226
  61. Index of $Ga\,In\,As\,P$ solid-solution refraction on the wavelength of laser generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  827–831
  62. Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  296–300
  63. Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  205–210
  64. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
  65. Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  193–197
  66. DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1408–1410
  67. COHERENT EMISSION GENERATION AND PECULIARITIES OF THE WAVEGUIDE RESTRICTION IN GASB-GA(1-X)INXSB(1-Y)ASY HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1081–1085
  68. POLARIZATION PECULIARITIES OF COHERENT EMISSION, GENERATED IN MULTILAYERED HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1843–1845
  69. POLARIZATION EFFECTS IN HETEROLASERS WITH DISTRIBUTED REVERSE COUPLING

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1560–1567
  70. Полупроводниковый лазер (${\lambda=1.55}$ мкм) с распределенной обратной связью в первом порядке, полученной импульсным лазерным отжигом

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1294–1297
  71. Полупроводниковая волноводная гетероструктура монолитно-интегрированная с оптической схемой интерференционной засветки

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1047–1050
  72. Перестраиваемые полупроводниковые лазеры с распределенной обратной связью и накачкой инжекционным гетеролазером

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1043–1046

  73. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis

    UFN, 194:1 (2024),  98–105

© Steklov Math. Inst. of RAS, 2026