Bagaev Timur Anatol'evich

Publications in Math-Net.Ru

1. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
2. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
3. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
4. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
5. Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  179–184
6. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
7. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
8. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
9. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
10. Temperature dependence of the output optical power of semiconductor lasers–thyristors based on AlGaAs/GaAs/InGaAs heterostructures
    
    Kvantovaya Elektronika, 54:4 (2024),  218–223
11. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
12. Switching (turn-on) dynamics of low-voltage InP homothyristors
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  295–300
13. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
14. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
    
    Kvantovaya Elektronika, 53:1 (2023),  11–16
15. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
16. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 52:2 (2022),  174–178
17. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
18. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
    
    Kvantovaya Elektronika, 51:10 (2021),  912–914
19. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
    
    Kvantovaya Elektronika, 51:10 (2021),  905–908
20. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
    
    Kvantovaya Elektronika, 51:2 (2021),  124–128
21. Triple integrated laser–thyristor
    
    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
22. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
23. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
24. Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
    
    Kvantovaya Elektronika, 49:10 (2019),  909–912
25. Superluminescent diodes of the 770–790-nm range based on semiconductor nanostructures with narrow quantum wells
    
    Kvantovaya Elektronika, 49:9 (2019),  810–813
26. Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 48:11 (2018),  993–995
27. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
    
    Kvantovaya Elektronika, 47:4 (2017),  291–293
28. Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  66–71
29. Quantum cascade laser based on GaAs/Al_0.45Ga_0.55As heteropair grown by MOCVD
    
    Kvantovaya Elektronika, 46:5 (2016),  447–450
30. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
31. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  104–108
32. High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
    
    Kvantovaya Elektronika, 43:5 (2013),  407–409