Nekorkin Sergei Mikhailovich

Publications in Math-Net.Ru

1. Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  134–138
2. Methods for switching radiation polarization in GaAs laser diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
3. GaAs-based laser diode with InGaAs waveguide quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
4. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
5. MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  345–350
6. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
7. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
8. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
9. Power characteristics of lasers with quantum-well waveguides and blocking layers
   
   Kvantovaya Elektronika, 48:4 (2018),  390–394
10. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
11. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
12. Optical thyristor based on GaAs/InGaP materials
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
13. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
14. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
15. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
16. Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1576–1582
17. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
18. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
19. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622
20. On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1489–1491
21. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
22. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  11–14
23. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
24. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
25. Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate
    
    Kvantovaya Elektronika, 45:3 (2015),  204–206
26. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
27. Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:10 (2014),  52–57
28. Substrate-emitting semiconductor laser with a trapezoidal active region
    
    Kvantovaya Elektronika, 44:4 (2014),  286–288
29. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1486–1488
30. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1231–1235
31. Guiding effect of quantum wells in semiconductor lasers
    
    Kvantovaya Elektronika, 43:5 (2013),  401–406
32. Mode structure in the far field radiation of a leaky-wave multiple quantum well laser
    
    Kvantovaya Elektronika, 42:10 (2012),  931–933
33. Anomalous characteristics of lasers with a large number of quantum wells
    
    Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011),  149–151
34. Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  652–656
35. Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1494–1497
36. Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010),  81–87