Dikareva Natalia Vasil'evna

Publications in Math-Net.Ru

1. Formation of vertical graphene on surface of the gallium-arsenide structures
   
   Fizika Tverdogo Tela, 65:4 (2023),  669–675
2. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
3. Methods for switching radiation polarization in GaAs laser diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
4. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
5. GaAs-based laser diode with InGaAs waveguide quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
6. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
7. Power characteristics of lasers with quantum-well waveguides and blocking layers
   
   Kvantovaya Elektronika, 48:4 (2018),  390–394
8. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
9. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
10. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622
11. On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1489–1491
12. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
13. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  11–14
14. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
15. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
16. Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate
    
    Kvantovaya Elektronika, 45:3 (2015),  204–206
17. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
18. Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:10 (2014),  52–57
19. Substrate-emitting semiconductor laser with a trapezoidal active region
    
    Kvantovaya Elektronika, 44:4 (2014),  286–288
20. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1486–1488
21. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1231–1235
22. Guiding effect of quantum wells in semiconductor lasers
    
    Kvantovaya Elektronika, 43:5 (2013),  401–406
23. Mode structure in the far field radiation of a leaky-wave multiple quantum well laser
    
    Kvantovaya Elektronika, 42:10 (2012),  931–933