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Publications in Math-Net.Ru
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Metastable states in the electronic subsystem of GaAs/Al$_x$Ga$_{1-x}$As heterostructures for quantum well infrared photodetectors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025), 54–57
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One-electron spectrum of a short-period InAs/GaSb superlattice with interface compensation of strains
Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 354–358
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A hybrid mid-IR photodetector based on semiconductor quantum wells
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 33–36
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The influence of interfacial effects on the electron spectrum of GaAs/AlGaAs structures used for the creation of MID-IR photodetectors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 3–6
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Excitonic effects and impurity–defect emission in GaAs/AlGaAs structures used for the production of mid-IR photodetectors
Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1632–1640
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Pb$_{1-x}$Eu$_{x}$Te (0 $\le x \le$ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 229–235
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Role of intervalley scattering in the radiative recombination in Pb$_{1-x}$Eu$_x$Te alloys (0 $\le x\le$ 1)
Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 745–750
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Broadening and splitting of emission spectra of a GaInAs/AlInAs quantum cascade laser in a quantising magnetic field
Kvantovaya Elektronika, 43:2 (2013), 144–146
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Dispersion of the refractive index of epitaxial Pb$_{1-x}$Eu$_x$Te (0 $\le x\le$ 1) alloy layers below the absorption edge
Fizika i Tekhnika Poluprovodnikov, 45:8 (2011), 1014–1020
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Dependence of photoluminescence spectra of epitaxial Pb$_{1-x}$Eu$_x$Te (0 $\le x\le$ 0.1) alloy layers on conditions of growth
Fizika i Tekhnika Poluprovodnikov, 44:7 (2010), 891–896
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An 8-μm quantum cascade laserproduced by the metalorganic vapour phase epitaxy method
Kvantovaya Elektronika, 40:2 (2010), 95–97
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