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Bogatov Aleksandr Petrovich

Publications in Math-Net.Ru

  1. Nonuniform distribution of gain along the cavity axis and lasing efficiency in a diode laser

    Kvantovaya Elektronika, 54:10 (2024),  593–599
  2. Structure of axial modes of a diode laser with an external cavity containing a volume phase grating

    Kvantovaya Elektronika, 53:7 (2023),  519–526
  3. Optical method for determining the amplitude of microwave current modulation in vertical-cavity surface emitting lasers

    Kvantovaya Elektronika, 52:10 (2022),  895–898
  4. High-power, narrow-band radiation source based on integrated external-cavity laser diodes

    Kvantovaya Elektronika, 52:9 (2022),  789–793
  5. Simulation of a two-dimensional laser diode array directly cooled by coolant flow

    Kvantovaya Elektronika, 51:3 (2021),  196–200
  6. Coherent combining of diode laser beams in a master oscillator – zigzag slab power amplifier system

    Kvantovaya Elektronika, 49:11 (2019),  1014–1018
  7. Rate equations for the diode laser and their applicability area

    Kvantovaya Elektronika, 49:8 (2019),  728–734
  8. Role of spontaneous emission in the formation of the steady-state optical spectrum of a diode laser

    Kvantovaya Elektronika, 49:8 (2019),  717–727
  9. Amplitude/phase modulation and spectrum of the vertical-cavity surface-emitting laser output

    Kvantovaya Elektronika, 47:9 (2017),  835–841
  10. Factor of spontaneous emission into the optical dielectric waveguide mode

    Kvantovaya Elektronika, 47:4 (2017),  313–318
  11. Intrinsic spontaneous emission-induced fluctuations of the output optical beam power and phase in a diode amplifier

    Kvantovaya Elektronika, 46:8 (2016),  699–702
  12. Amplified spontaneous emission spectrum at the output of a diode amplifier saturated by an input monochromatic wave

    Kvantovaya Elektronika, 46:8 (2016),  693–698
  13. Experimental study of a modulated beam AlGaAs/GaAs diode amplifier operating in the highly saturated gain regime

    Kvantovaya Elektronika, 44:11 (2014),  1005–1011
  14. Diode amplifier of modulated optical beam power

    Kvantovaya Elektronika, 44:11 (2014),  997–1004
  15. Amplitude and phase modulation of radiation in a travelling-wave amplifier based on a laser diode

    Kvantovaya Elektronika, 43:8 (2013),  699–705
  16. Measuring the Stokes parameters of radiation of semiconductor lasers

    Kvantovaya Elektronika, 41:10 (2011),  869–874
  17. Estimation of the reliability of heterolasers subjected to ageing under irradiation by a fast particle flux

    Kvantovaya Elektronika, 41:2 (2011),  99–102
  18. Stokes parameters of the radiation of transverse-single-mode InGaAs/AlGaAs lasers with a quantum-well active region

    Kvantovaya Elektronika, 41:1 (2011),  20–25
  19. Performance of an optical amplifier/modulator based on a diode laser

    Kvantovaya Elektronika, 40:9 (2010),  782–788
  20. Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 2. Calculation of the spatial temperature distribution and threshold of the catastrophic optical degradation

    Kvantovaya Elektronika, 40:7 (2010),  589–595
  21. Catastrophic optical degradation of the output facet of high-power single-transverse-mode diode lasers. 1. Physical model

    Kvantovaya Elektronika, 40:7 (2010),  583–588
  22. Radiation parameters of ridge lasers at high pump currents

    Kvantovaya Elektronika, 38:11 (2008),  993–1000
  23. Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power

    Kvantovaya Elektronika, 38:10 (2008),  935–939
  24. Diode-array-pumped repetitively pulsed neodymium phosphate glass laser

    Kvantovaya Elektronika, 38:9 (2008),  805–812
  25. Modes of a semiconductor rectangular microcavity

    Kvantovaya Elektronika, 38:1 (2008),  16–22
  26. High-power multimode superluminescent diode emitting at 840 nm

    Kvantovaya Elektronika, 37:11 (2007),  996–1000
  27. Output power of a ridge semiconductor laser in the single-frequency regime

    Kvantovaya Elektronika, 37:8 (2007),  745–752
  28. Simulation of emission characteristics and optimisation of waveguiding parameters of a ridge semiconductor heterolaser to maximise the emission brightness

    Kvantovaya Elektronika, 36:11 (2006),  1058–1064
  29. Autocorrelation function and emission spectrum of single-transverse-mode heterolasers in the self-sustained intensity pulsation regime

    Kvantovaya Elektronika, 36:8 (2006),  751–757
  30. Spectral properties of a semiconductor α-DFB laser cavity

    Kvantovaya Elektronika, 36:8 (2006),  745–750
  31. Efficiency of resonance pumping and optical gain in a Nd-doped phosphate glass excited by diode arrays

    Kvantovaya Elektronika, 36:4 (2006),  302–308
  32. Quality of the optical beam of a high-power, single-mode, 0.81-μm ridge AlGaAs heterolaser

    Kvantovaya Elektronika, 35:6 (2005),  515–519
  33. Approximate orthogonality relation for the modes of an open cavity

    Kvantovaya Elektronika, 35:4 (2005),  356–358
  34. Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

    Kvantovaya Elektronika, 35:4 (2005),  316–322
  35. Stability and self-stabilisation of single-frequency lasing in a semiconductor laser

    Kvantovaya Elektronika, 33:11 (2003),  941–948
  36. High-power single-transverse-mode ridge optical waveguide semiconductor lasers

    Kvantovaya Elektronika, 32:12 (2002),  1099–1104
  37. Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

    Kvantovaya Elektronika, 32:9 (2002),  809–814
  38. Dependence of the radiation pattern of a leaky-mode, quantum-well heterolaser on the pump current

    Kvantovaya Elektronika, 31:10 (2001),  847–852
  39. Optical loss in strained quantum-well semiconductor ridge lasers

    Kvantovaya Elektronika, 30:10 (2000),  878–880
  40. Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasers

    Kvantovaya Elektronika, 30:5 (2000),  401–405
  41. Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

    Kvantovaya Elektronika, 30:4 (2000),  315–320
  42. Attenuation of an optical wave propagating in a waveguide, formed by layers of a semiconductor heterostructure, owing to scattering on inhomogeneities

    Kvantovaya Elektronika, 27:3 (1999),  223–227
  43. Experimental determination of the factor representing spontaneous emission into a mode of a semiconductor laser operating on a leaky wave

    Kvantovaya Elektronika, 27:2 (1999),  131–133
  44. Angular distribution of the radiation from quantum-well ‘leaky-wave’ InGaAs/GaAs lasers

    Kvantovaya Elektronika, 26:1 (1999),  33–36
  45. Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime

    Kvantovaya Elektronika, 26:1 (1999),  28–32
  46. Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures

    Kvantovaya Elektronika, 25:7 (1998),  647–650
  47. Calculation of the propagation constant of a laser mode in multilayer quantum-well heterostructures by the ‘incoming’ wave method

    Kvantovaya Elektronika, 25:6 (1998),  488–492
  48. Influence of spatially inhomogeneous gain saturation, caused by a standing wave, on the amplitude — frequency modulation characteristic of semiconductor laser radiation

    Kvantovaya Elektronika, 24:4 (1997),  293–298
  49. Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra

    Kvantovaya Elektronika, 21:7 (1994),  633–639
  50. Numerical simulation of the scattering of a converging optical beam by a surface with one-dimensional roughness

    Kvantovaya Elektronika, 21:2 (1994),  186–190
  51. Radiative characteristics of buried mesa stripe heterolasers emitting at 1.5 μm

    Kvantovaya Elektronika, 17:9 (1990),  1147–1150
  52. Injection laser with a waveguide lens

    Kvantovaya Elektronika, 16:11 (1989),  2173–2176
  53. Microscanning method for investigation of the intensity distribution in an injection laser beam

    Kvantovaya Elektronika, 16:9 (1989),  1944–1946
  54. Investigation of the transverse structure of the radiation field of an injection laser using an external dispersive resonator

    Kvantovaya Elektronika, 16:9 (1989),  1765–1769
  55. Line width of a single longitudinal mode emitted by an AlGaAs heterojunction laser

    Kvantovaya Elektronika, 15:11 (1988),  2223–2226
  56. Spreading of the current in a stripe semiconductor laser with oxide insulation

    Kvantovaya Elektronika, 15:9 (1988),  1720–1723
  57. Width and profile of the emission line of a cw InGaAsP/InP laser with a buried stripe heterostructure

    Kvantovaya Elektronika, 15:8 (1988),  1552–1554
  58. Influence of temperature on the angular distribution of radiation emitted by InGaAsP heterolasers

    Kvantovaya Elektronika, 15:2 (1988),  253–258
  59. Waveguide coefficient of the amplitude-phase coupling in injection lasers

    Kvantovaya Elektronika, 14:11 (1987),  2190–2194
  60. Fluctuations of the intensity of radiation from a single-frequency injection laser with an external dispersive resonator

    Kvantovaya Elektronika, 13:12 (1986),  2414–2423
  61. Optical traveling-wave amplifier based on an injection laser diode

    Kvantovaya Elektronika, 13:9 (1986),  1859–1867
  62. Nonlinear refraction in semiconductor lasers (review)

    Kvantovaya Elektronika, 12:3 (1985),  465–493
  63. Continuous-wave single-frequency emission from an injection laser in the form of a terraced heterostructure with an external dispersive resonator

    Kvantovaya Elektronika, 12:1 (1985),  162–164
  64. Spectrally matched modulation, at frequencies up to 2 GHz, of injection laser radiation in a traveling-wave amplifier

    Kvantovaya Elektronika, 11:2 (1984),  231–232
  65. Direct detection of picosecond pulses emitted by an injection laser with active mode locking

    Kvantovaya Elektronika, 10:10 (1983),  1957–1958
  66. Interaction of modes and self-stabilization of singlefrequency emission from injection lasers

    Kvantovaya Elektronika, 10:9 (1983),  1851–1865
  67. Stimulated scattering of light by waves representing excited-state populations

    Kvantovaya Elektronika, 10:4 (1983),  865–867
  68. Generation of picosecond pulses in an injection laser with an external selective resonator

    Kvantovaya Elektronika, 9:11 (1982),  2323–2326
  69. Tunable cw emission in the 1.3/J range from a GaInPAs/InP heterolaser with an external dispersive resonator

    Kvantovaya Elektronika, 9:7 (1982),  1504–1506
  70. Radiofrequency spectra of mode beats and fluctuations of the intensity of radiation emitted by an injection laser with an external resonator

    Kvantovaya Elektronika, 8:9 (1981),  1957–1961
  71. Bistable operation and spectral tuning of an injection laser with an external dispersive resonator

    Kvantovaya Elektronika, 8:4 (1981),  853–859
  72. Optical heterodyning of radiation from an injection laser with an external dispersive resonator

    Kvantovaya Elektronika, 7:12 (1980),  2642–2644
  73. Injection $GaInPAs/InP$ heterojunction laser with $6-7^\circ$ output divergence, emitting nonwaveguide modes

    Kvantovaya Elektronika, 7:11 (1980),  2487–2488
  74. Properties of planar stripe-geometry heterojunction lasers. I. Nonlinear and discontinuous current-power characteristics

    Kvantovaya Elektronika, 7:8 (1980),  1664–1669
  75. Injection laser with an unstable resonator

    Kvantovaya Elektronika, 7:5 (1980),  1089–1092
  76. Stepped shape of radiation pulses emitted by double-heterostructure GaAs–AlGaAs injection lasers with stripe contacts

    Kvantovaya Elektronika, 7:1 (1980),  123–127
  77. Reduction of the divergence of injection laser radiation by excitation of nonwaveguide modes

    Kvantovaya Elektronika, 6:12 (1979),  2639–2641
  78. Single-frequency cw injection heterolaser tunable by an external dispersive resonator

    Kvantovaya Elektronika, 6:6 (1979),  1264–1270
  79. Hysteresis of the output radiation power of cw AlGaAs heterolasers

    Kvantovaya Elektronika, 5:11 (1978),  2493–2495
  80. Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. II. Theory

    Kvantovaya Elektronika, 5:11 (1978),  2408–2415
  81. Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. I. Experimental investigation using an external resonator

    Kvantovaya Elektronika, 5:11 (1978),  2402–2407
  82. Mode deformation due to self-focusing in injection lasers and its connection with nonlinearity of the output characteristic

    Kvantovaya Elektronika, 5:3 (1978),  603–608
  83. Radiative characteristics of an injection laser with an external resonator

    Kvantovaya Elektronika, 3:8 (1976),  1819–1821
  84. Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers

    Kvantovaya Elektronika, 3:7 (1976),  1609–1611
  85. Heterojunction lasers made of GaxIn1–xAsyP1–y and AlxGa1–xSbyAs1–y solid solutions

    Kvantovaya Elektronika, 1:10 (1974),  2294–2295
  86. Anomalous interaction of spectral modes in a semiconductor laser

    Kvantovaya Elektronika, 1:10 (1974),  2286–2288
  87. Injection laser with a diffraction grating in its resonator

    Kvantovaya Elektronika, 1:5 (1974),  1145–1149
  88. Kinetics of the emission spectrum of an injection laser and collapse of single-mode emission

    Kvantovaya Elektronika, 1973, no. 5(17),  14–20
  89. Comparison of the instantaneous and averaged emission spectra of an injection laser operating under spiking conditions

    Kvantovaya Elektronika, 1971, no. 5,  93–95

© Steklov Math. Inst. of RAS, 2026