Savel'ev Artem Vladimirovich

Publications in Math-Net.Ru

1. On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1034–1037
2. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
3. Spatial hole burning and spectral stability of a quantum-dot laser
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1546–1552
4. Thermal resistance of ultra-small-diameter disk microlasers
   
   Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
5. Lasing in microdisks of ultrasmall diameter
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1666–1670
6. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
   
   Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
7. Efficient electro-optic semiconductor medium based on type-II heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1542–1553
8. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
   
   Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1406–1413
9. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
   
   Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
10. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
11. Development of supercomputer simulation software based on Matlab source code
    
    Program Systems: Theory and Applications, 4:2 (2013),  21–42
12. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
13. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
14. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  701–707
15. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  241–246
16. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
17. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  996–1000
18. A temperature-stable semiconductor laser based on coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  560–565
19. Spectral width of laser generation in quantum dot lasers: An analytical approach
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  245–250
20. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356