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Publications in Math-Net.Ru
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The density of states method for calculating the magnetic properties of a quantum spin chain
Fizika Tverdogo Tela, 67:9 (2025), 1776–1783
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Mechanisms of current transport in TiN/Ge$_2$Sb$_2$Te$_5$/Au structure
Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 662–667
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Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor
Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 443–447
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Spin-fluctuation transition in the disordered Ising model
Pis'ma v Zh. Èksper. Teoret. Fiz., 114:6 (2021), 383–390
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Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films
Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 372–375
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Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model
Fizika Tverdogo Tela, 61:11 (2019), 2036–2039
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Estimation of the temperature of the current filament that forms upon switching in GeSbTe
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1503–1506
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Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 154–160
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Effect of Coulomb correlations on luminescence and absorption in compensated semiconductors
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 905–910
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Efficient electro-optic semiconductor medium based on type-II heterostructures
Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1542–1553
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Development of supercomputer simulation software based on Matlab source code
Program Systems: Theory and Applications, 4:2 (2013), 21–42
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Physics of switching and memory effects in chalcogenide glassy semiconductors
Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 577–608
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