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Konnikov Samuil Girshevich

Publications in Math-Net.Ru

  1. Determination of the thicknesses and visualization of ion-exchange waveguides in glasses by scanning electron microscopy

    Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  456–459
  2. X-ray study of the superstructure in heavily doped porous indium phosphide

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  89–92
  3. X-ray studies of the domain formation in rocks under blasting

    Fizika Tverdogo Tela, 58:11 (2016),  2248–2251
  4. Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review

    Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  1–29
  5. Investigation of microcrystalline silicon by the small-angle X-ray-scattering technique

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1078–1082
  6. A study of fullerene-quantum dot composite structure on substrates with a transparent electrode layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:4 (2015),  33–40
  7. Characterization of the structure of ultradispersed diamond using X-ray diffractometry and small-angle X-ray scattering

    Fizika Tverdogo Tela, 56:11 (2014),  2265–2268
  8. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
  9. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1186–1191
  10. Domain structure of GaN/SiC-based materials for semiconductor lasers

    Fizika Tverdogo Tela, 55:10 (2013),  2035–2038
  11. Investigation of the structure and luminescence properties of CdF$_2$–CaF$_2$ : Eu superlattices on Si(111)

    Fizika Tverdogo Tela, 55:7 (2013),  1396–1402
  12. Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures

    Fizika Tverdogo Tela, 55:3 (2013),  591–601
  13. Features of the structure and defect states in hydrogenated polymorphous silicon films

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013),  536–540
  14. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
  15. Statistical analysis of AFM topographic images of self-assembled quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  921–926
  16. Radiation-induced surface degradation of GaAs and high electron mobility transistor structures

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  833–844
  17. Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices

    Zhurnal Tekhnicheskoi Fiziki, 81:6 (2011),  80–84
  18. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  829–835
  19. ELECTRON-MICROSCOPIC STUDY OF INGAASP/INGAP/GAAS STRUCTURES WITH THIN (LESS-THAN-10 NM) LAYERS BY THE LIQUID-PHASE EPITAXY TECHNIQUE

    Zhurnal Tekhnicheskoi Fiziki, 62:2 (1992),  105–111
  20. POLARIMETRIC PROPERTIES OF NI-P-GAAS SURFACE-BARRIER STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  32–37
  21. DIRECTED PHOTOPLEOCHROISM OF ITO-A(3)B(5)(GAP, GAPXAS1-X) HETEROTRANSITIONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  11–15
  22. DETERMINATION OF (TC, DELTA-TC) LOCAL PARAMETERS OF HTSC FILMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:21 (1992),  20–23
  23. POLARIMETRIC EFFECT IN AU-N-GAAS STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:12 (1992),  39–42
  24. PHOTOPLEOCHROISM OF MULTILAYERED GAP SURFACE-BARRIER STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:12 (1992),  11–15
  25. Возможности профилирования концентрации тяжелых элементов в тонких ВТСП-пленках на пучках быстрых ионов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992),  91–94
  26. Дефекты с глубокими уровнями в GaAs, выращенном из раствора-расплава Ga$-$Bi

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  338–342
  27. EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5 LAYERS

    Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990),  165–169
  28. Электронно-зондовые исследования деградации непрерывных инжекционных гетеролазеров

    Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  2010–2016
  29. Обнаружение нового метастабильного уровня $DX$-центра в тонких легированных Si слоях Al$_{x}$Ga$_{1-x}$As

    Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  1978–1982
  30. Особенности поведения радиационных дефектов в структурах на основе Al$_{x}$Ga$_{1-x}$As/GaAs

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1320–1322
  31. Определение электрофизических параметров полупроводников методом математического моделирования сигнала индуцированного тока

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  271–275
  32. DIRECT OBSERVATION OF SPACE HETEROGENEITY OF HTSC FILM SUPERCONDUCTIVITY BY THE LOW-TEMPERATURE SCREEN ELECTRON-MICROSCOPY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:10 (1990),  47–51
  33. Бистабильные дефекты в GaAs, выращенном методом жидкофазной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1689–1691
  34. Определение электрофизических параметров тонких гетероэпитаксиальных слоев в растровом электронном микроскопе (эксперимент)

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1416–1419
  35. Определение электрофизических параметров тонких гетероэпитаксиальных слоев в растровом электронном микроскопе (теория)

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1411–1415
  36. Механизм компенсации в многослойных структурах на основе нелегированного GaAs, выращенных из раствора-расплава в Ga

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1058–1065
  37. EFFECT OF ABRUPT INCREASE OF CONDUCTIVITY STIMULATED BY ELECTRON-BEAMS IN ALLOYED GLASS-LIKE SEMICONDUCTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  48–51
  38. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
  39. Определение времени жизни неосновных носителей в полупроводниках при возбуждении электронным пучком в РЭМ

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1803–1807
  40. EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1671–1675
  41. SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1651–1655
  42. CHANGE OF GALLIUM-ARSENIDE COMPOSITION IN THE VICINITY OF SURFACE UNDER AR+-ION BOMBARDMENT

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  673–676
  43. MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID EPITAXY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988),  593–597
  44. LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE APPROXIMATELY-20A WIDTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  171–176
  45. REMOTE FIELDS OF RADIATION OF HETEROLASERS WITH A GRADIENT WAVE-GUIDE

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  747–754
  46. Function of Electron-Hole Pair Generation in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors under Electron-Beam Excitation

    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  2028–2032
  47. Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures Produced by MOC Hydride Method

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1745–1749
  48. Current Induced by Electron Probe in Semiconductor Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1648–1653
  49. Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures

    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1327–1329
  50. Determination of the Parameters of Radiationless Recombination in $p{-}n$ Structures by the Electron Probe

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  938–941
  51. Information

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  770
  52. Picosecond raster electronic microscopy of fast semiconducting devices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1183–1186
  53. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
  54. Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures

    Fizika Tverdogo Tela, 28:3 (1986),  789–792
  55. X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2206–2211
  56. Microcathodoluminescence of Double Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1049–1054
  57. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093
  58. Electric and photoelectric properties of $Cd\,Te-Cd_{x}\,Hg_{1-x}\,Te$ (${x\sim0.6-0.7}$) heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:16 (1986),  976–979
  59. Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  533–537
  60. Review of the Book by B. A. Tkhorik and L. S. Khazan «Plastic Deformation and Dislocations of Discrepancy in Heteroepitaxial Systems»

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1341–1342
  61. Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  193–197
  62. CRYSTALLIZATION OF HETEROSTRUCTURES FROM SOLUTION-FUSION SUPERCOOLING

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2077–2079
  63. EFFECT OF DEPTH OF THE P-N TRANSITION LOCATION ON X-RAY EMF CURVES UNDER BRAGG-DIFFRACTION CONDITIONS

    Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  655–657
  64. Исследование лавинного умножения в карбиде кремния с помощью электронного зонда

    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1556–1560
  65. Electron-Probe Study of Deep Centers in Undoped GaAs

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  383–385
  66. NON-HOMOGENEOUS MULTIPLICATION IN CASCADE PHOTODIODES WITH THE INCONGRUITY OF LATTICE PERIODS ON THE HETEROBOUNDARY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984),  1360–1364
  67. Нарушение псевдоморфного состояния в Ga$_{1-x}$Al$_{x}$P/GaP структурах

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:3 (1984),  149–153
  68. DISTINCTION OF THERMAL-EXPANSION COEFFICIENTS IN GA1-XALXP-GAP HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  411–412
  69. Квантовая эффективность пластически и упруго деформированных варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2173–2176
  70. Мышьяк в Ga$_{1-x}$Al$_{x}$Sb$_{1-y}$As$_{y}$/GaSb: коэффициент сегрегации и распределение по толщине эпитаксиальных слоев

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  645–648

  71. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894

© Steklov Math. Inst. of RAS, 2026