Bert Nikolai Alekseevich

Publications in Math-Net.Ru

1. Буферные структуры GaAs/Si, полученные методом газофазной эпитаксии из металлоорганических соединений
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  48–52
2. Bragg resonance in the system of layers of plasmonic Bi nanoparticles in GaAs matrix
   
   Fizika Tverdogo Tela, 67:1 (2025),  39–43
3. CsPbBr₃ and Cs₄PbBr₆ perovskite nanoparticles: hidden potential of Cs₄PbBr₆ or ineffective fluorescence?
   
   Mendeleev Commun., 35:2 (2025),  193–195
4. Ferroelectric properties of (Al,Ga)InP$_2$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  130–135
5. Formation of quasi-two-dimensional layers of bismuth nanoparticles in epitaxial layers of gallium arsenide
   
   Fizika Tverdogo Tela, 66:9 (2024),  1514–1519
6. Impact of the atomic ordering degree on the ferroelectric properties of GaInP$_2$ alloys
   
   Optics and Spectroscopy, 132:11 (2024),  1127–1130
7. Microstructure features of nanosized AsSb precipitates in LT-GaAsSb
   
   Fizika Tverdogo Tela, 65:12 (2023),  2309–2316
8. Formation of a 10$\mathring{\mathrm{A}}$ phase with halloysite structure under hydrothermal conditions with varying initial chemical composition
   
   Nanosystems: Physics, Chemistry, Mathematics, 14:2 (2023),  264–271
9. Influence of intermediate low-temperature heating on precipitation in nonstoichiometric GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  507–512
10. Structure and optical properties of a composite AsSb–Al$_{0.6}$Ga$_{0.4}$As$_{0.97}$Sb$_{0.03}$ metamaterial
    
    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  71–76
11. Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  882–889
12. Specific features of structural stresses in InGaN/GaN nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  785–788
13. Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1112–1116
14. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
15. The features of GaAs nanowire SEM images
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  510
16. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
17. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1146–1150
18. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84
19. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1710–1713
20. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
21. Properties of AlN films deposited by reactive ion-plasma sputtering
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
22. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1578–1582
23. Features of the structure and defect states in hydrogenated polymorphous silicon films
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013),  536–540
24. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1196–1203
25. Elastic fields and physical properties of surface quantum dots
    
    Fizika Tverdogo Tela, 53:10 (2011),  1986–1996
26. Electron microscopy of GaAs Structures with InAs and as quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1642–1645
27. Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  193–197