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Publications in Math-Net.Ru
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Adapted MLP-Mixer network based on crossbar arrays of fast and multilevel switching $(\mathrm{Co}-\mathrm{Fe}-\mathrm{B})_x(\mathrm{LiNbO}_3)_{100-x}$ nanocomposite memristors
Nanoscale Horiz., 9 (2024), 238–247
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Temperature-induced transition between resistive switching modes of parylene-based memristive crossbar structures
Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023), 355–360
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Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects
Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54
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Percolation effect impact on resistive switching of structures based on nanocomposite (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$
Fizika Tverdogo Tela, 64:11 (2022), 1690–1694
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Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 3–7
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Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$
Fizika Tverdogo Tela, 62:9 (2020), 1562–1565
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Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene
Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020), 379–386
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The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates
Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 257–263
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Conductance quantization in memristive structures based on poly-p-xylylene
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 913–917
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Memristors based on poly($p$-xylylene) with embedded silver nanoparticles
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 25–28
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Poly-para-xylylene-based memristors on flexible substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43
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Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 19–23
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A precise algorithm of memristor switching to a state with preset resistance
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 20–28
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Effect of the thickness of the TiO$_x$/TiO$_2$ layers on their memristor properties
Zhurnal Tekhnicheskoi Fiziki, 85:1 (2015), 114–117
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Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization
Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:4 (2014), 1–8
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Features of the structure and defect states in hydrogenated polymorphous silicon films
Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540
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Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1283–1287
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Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties
Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 769–774
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Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry
Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 369–375
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