Kirienko Viktor Vladimirovich

Publications in Math-Net.Ru

1. Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
   
   Fizika Tverdogo Tela, 66:11 (2024),  1871–1878
2. Nonlinear Hall coefficient in films of a three-dimensional topological insulator
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:3 (2024),  208–213
3. Photocurrent enhancement in silicon photodiodes with Ge quantum dots by hybrid plasmonic and dielectric modes of a planar waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  386–392
4. Manifestation of “slow” light in the photocurrent spectra of Ge/Si quantum dot layers combined with a photonic crystal
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 118:4 (2023),  240–244
5. Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  501–506
6. Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  596–601
7. Localization of surface plasmon waves in hybrid photodetectors with subwavelength metallic arrays
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 108:6 (2018),  399–403
8. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:7 (2017),  419–423
9. Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:7 (2016),  507–511
10. Suppression of hole relaxation in small-sized Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015),  678–682
11. Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015),  846–850
12. Bidirectional photocurrent of holes in layers of Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014),  99–103
13. Intraband optical transitions of holes in strained SiGe quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013),  180–184