|
|
Publications in Math-Net.Ru
-
Electroluminescence of diamond NV centers at temperatures 450$^\circ$C–680$^\circ$C
Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025), 520–528
-
Electrical properties of highly nitrogen–doped synthetic single crystal diamonds grown at high pressure and temperature
Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 424–433
-
High temperature light emitting diamond $p$–$i$–$n$ diode based on nitrogen-vacancy luminescence centers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024), 39–42
-
Measurements of resistivity of nitrogen-doped single crystals of type Ib diamond by the var der Pauw method with Ti–Pt contacts in the temperature range 573–1000 K
Fizika i Tekhnika Poluprovodnikov, 57:5 (2023), 370–376
-
Laser-induced luminescence of boron-doped synthetic diamond at various laser pulse durations
Optics and Spectroscopy, 130:4 (2022), 477–480
-
Phase velocities of ultrasound waves and elastic modules in the IIb type synthetic diamond single crystal
J. Sib. Fed. Univ. Math. Phys., 11:5 (2018), 597–602
-
Recombination and trapping centers in pure and doped TlBr crystals
Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1153–1163
-
Experimental investigation of the linear and nonlinear elastic properties of synthetic diamond single crystal
J. Sib. Fed. Univ. Math. Phys., 6:1 (2013), 120–126
-
Kinetics of the current response in TlBr detectors under a high dose rate of $\gamma$-ray irradiation
Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 405–410
© , 2026