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Evtikhiev Vadim Pavlovich

Publications in Math-Net.Ru

  1. Single-mode quantum-cascade lasers with variable etching depth of grating slits

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  23–28
  2. Single-mode lasing on radial modes in ring cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  52–56
  3. Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  552–555
  4. Strong coupling of exciton in organic material and plasmonic WGM localized on the surface of silver nanoparticles

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023),  14–15
  5. Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity

    Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022),  611–612
  6. On the effect of etching with a focused Ga$^+$ ion beam in the energy range 12–30 keV on the luminescent properties Al$_{0.18}$Ga$_{0.82}$As/GaAs/Al$_{0.18}$Ga$_{0.82}$As heterostructure

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1120–1124
  7. Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  908–914
  8. Study of the spatial characteristics of emission of surface-emitting ring quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  601–606
  9. Subwave textured surfaces for the radiation coupling from the waveguide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:6 (2022),  51–54
  10. Quantum-cascade laser with radiation output through a textured layer

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
  11. Surface emitting quantum-cascade ring laser

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
  12. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
  13. Calculation of the Ga+ FIB ion dose distribution by SEM image

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
  14. Strong coupling of excitons in hexagonal GaN microcavities

    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  85–88
  15. Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  8–11
  16. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography

    Fizika Tverdogo Tela, 61:12 (2019),  2333
  17. Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1579–1583
  18. Selective epitaxial growth of III–N structures using ion-beam nanolithography

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
  19. Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  816–818
  20. Liquid-metal field electron source based on porous GaP

    Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1416–1422
  21. Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:1 (2015),  102–110
  22. On the lifetime of charge carriers in quantum dots at low temperatures

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  24–29
  23. Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

    Fizika Tverdogo Tela, 54:6 (2012),  1057–1061
  24. Photoemission from InAs/GaAs quantum dots decorated with cesium adatoms

    Pis'ma v Zh. Èksper. Teoret. Fiz., 96:5 (2012),  363–366
  25. On the accuracy of quantitative measurements of the local surface potential

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:5 (2010),  71–77
  26. MOLECULAR-BEAM EPITAXY (MBE) OF GAAS AND (AL,GA)AS ON UNORIENTED GAAS(100) SUBSTRATES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:11 (1992),  72–76
  27. Обнаружение нового метастабильного уровня $DX$-центра в тонких легированных Si слоях Al$_{x}$Ga$_{1-x}$As

    Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  1978–1982
  28. Особенности эффекта устойчивой фотопроводимости в селективно легированных двойных гетероструктурах GaAs/$n$-(Al, Ga)As

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  845–848
  29. Квантово-размерные AlGaAs/GaAs-гетероструктуры со 100%-м квантовым выходом излучательной рекомбинации, полученные методом молекулярно-пучковой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2105–2110
  30. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712
  31. Special Features of Temperature Dependence of Thresholds in InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation and Thin Active Region

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1496–1498
  32. Special Features of Threshold Characteristics of InGaAsP/InP DH Lasers (${\lambda=1.3}\,\mu m$) with Separate Limitation and Superthin Active Regions

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1420–1423
  33. Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  449–455
  34. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162
  35. Инжекционные РО InGaAsP/InP ДГС лазеры с порогом $300\,\text{А/см}^{2}$ (четырехсколотые образцы, ${\lambda=1.25}$ мкм, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2057–2060
  36. Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС с тонкой активной областью (${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом жидкостной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2041–2045
  37. Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under Optical Excitation

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  102–108
  38. Форма краевой полосы в InGaAsP/InP ДГС (${\tau= 1.3}$ мкм) при низком и высоком уровне фотовозбуждения

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1652–1655
  39. Сравнение краев поглощения в бинарных и многокомпонентных прямозонных соединениях A$^{\text{III}}$B$^{\text{V}}$ на основе системы InGaAsP

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1402–1405
  40. Фотолюминесцентные исследования перераспределения неравновесных носителей заряда в InGaAsP/InP с двумя активными областями

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  714–717

© Steklov Math. Inst. of RAS, 2026