Osipov Andrei Viktorovich

Publications in Math-Net.Ru

1. Природа стабильных и метастабильных состояний электронной структуры вакансионных нитей на поверхности карбида кремния
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:5 (2026),  45–49
2. Nano-electromagnets based on hybrid SiC/Si nanostructures
   
   Fizika Tverdogo Tela, 67:8 (2025),  1432–1436
3. Magnetic susceptibility SiC/Si hybrid structures synthesized by the method of coordinated substitution of atoms
   
   Fizika Tverdogo Tela, 67:4 (2025),  624–634
4. Mechanism of growth of Ga$_2$O$_3$ epitaxial layers by hydride vapour-phase epitaxy on SiC/Si (110) substrate
   
   Fizika Tverdogo Tela, 67:1 (2025),  105–113
5. Machine learning-based predictive modeling for SiC/Si thin film growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  31–35
6. Andreev terahertz irradiation generators
   
   Fizika Tverdogo Tela, 66:11 (2024),  2052–2058
7. The effect of tin on the properties of gallium nitride grown by hydride vapor-phase epitaxy
   
   Fizika Tverdogo Tela, 66:8 (2024),  1338–1343
8. Structure evolution during the transformation of Si into SiC by the method of coordinated substitution of atoms
   
   Fizika Tverdogo Tela, 66:7 (2024),  1133–1143
9. Interaction of silicon vacancies in silicon carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  19–23
10. Change of the elastic strain in SiC films growing on Si substrates by the method of consistent atomic substitution
    
    Fizika Tverdogo Tela, 65:1 (2023),  71–75
11. Top-down formation of biocompatible SiC nanotubes
    
    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  343–347
12. Phase transformations in gallium oxide layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:17 (2023),  6–9
13. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
14. Thermal conductivity of hybrid SiC/Si substrates for the growth of LED heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023),  19–21
15. Growth of SiC, AlN, and GaN films on silicon parts of arbitrary geometry for microelectromechanical applications
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023),  3–6
16. Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry
    
    Fizika Tverdogo Tela, 64:3 (2022),  326–336
17. Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates
    
    Fizika Tverdogo Tela, 64:1 (2022),  117–124
18. Phase transitions in silicon carbide epitaxial layers grown on a silicon substrate by the method of coordinated substitution of atoms
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  715–718
19. Spintronic properties of the interface between Si(111) and 3$C$-SiC(111) grown by the method of coordinated substitution of atoms
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:20 (2022),  43–46
20. Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  24–28
21. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 63:3 (2021),  363–369
22. Registration of terahertz radiation with silicon carbide nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1195–1202
23. Terahertz emission from silicon carbide nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1027–1033
24. Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  621–624
25. Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces
    
    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  103–111
26. Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  7–10
27. The thermodynamic stability of In$_{x}$Ga$_{1-x}$N solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  51–54
28. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
29. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
30. The influence of the porosity of silicon layer on the elastic properties of hybrid SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  25–28
31. The optical properties, energy band structure, and interfacial conductance of a 3$C$-SiC(111)/Si(111) heterostructure grown by the method of atomic substitution
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  3–5
32. Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  3–6
33. Coating of nanostructured profiled Si surface with a SiC layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020),  19–22
34. Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  28–31
35. Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  36–38
36. Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  22–25
37. Mechanism of diffusion of carbon and silicon monooxides in a cubic silicon carbide crystal
    
    Fizika Tverdogo Tela, 61:12 (2019),  2334–2337
38. Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution
    
    Fizika Tverdogo Tela, 61:12 (2019),  2313–2315
39. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
40. Pathways of transitions between polytypes in silicon carbide
    
    Fizika Tverdogo Tela, 61:8 (2019),  1443–1447
41. Two-stage conversion of silicon to nanostructured carbon by the method of coordinated atomic substitution
    
    Fizika Tverdogo Tela, 61:3 (2019),  587–593
42. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
    
    Fizika Tverdogo Tela, 61:3 (2019),  433–440
43. Microscopic description of the mechanism of transition between the 2$H$ and 4$H$ polytypes of silicon carbide
    
    Fizika Tverdogo Tela, 61:3 (2019),  422–425
44. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
45. Epitaxial growth of zinc sulfide by atomic layer deposition on SiC/Si hybrid substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  11–14
46. Growing III–V semiconductor heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  24–27
47. A new type of carbon nanostructure on a vicinal SiС(111)-8$^\circ$ surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  17–20
48. A new trigonal (rhombohedral) sic phase: ab initio calculations, a symmetry analysis and the Raman spectra
    
    Fizika Tverdogo Tela, 60:10 (2018),  2022–2027
49. Mechanism of formation of carbon–vacancy structures in silicon carbide during its growth by atomic substitution
    
    Fizika Tverdogo Tela, 60:9 (2018),  1841–1846
50. Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates
    
    Fizika Tverdogo Tela, 60:5 (2018),  851–856
51. Epitaxial growth of cadmium selenide films on silicon with a silicon carbide buffer layer
    
    Fizika Tverdogo Tela, 60:3 (2018),  499–504
52. Effect of chemical treatment of a silicon surface on the quality and structure of silicon-carbide epitaxial films synthesized by atom substitution
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  656–663
53. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
54. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide
    
    Fizika Tverdogo Tela, 59:12 (2017),  2403–2408
55. A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon
    
    Fizika Tverdogo Tela, 59:6 (2017),  1214–1217
56. X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method
    
    Fizika Tverdogo Tela, 59:5 (2017),  986–998
57. Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide
    
    Fizika Tverdogo Tela, 59:4 (2017),  755–761
58. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
    
    Fizika Tverdogo Tela, 59:4 (2017),  660–667
59. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer
    
    Fizika Tverdogo Tela, 59:2 (2017),  385–388
60. Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide
    
    Fizika Tverdogo Tela, 59:1 (2017),  30–35
61. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
62. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  651–658
63. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  414–420
64. The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:13 (2017),  81–88
65. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
66. Epitaxial gallium oxide on a SiC/Si substrate
    
    Fizika Tverdogo Tela, 58:9 (2016),  1812–1817
67. Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates
    
    Fizika Tverdogo Tela, 58:7 (2016),  1398–1402
68. Elastic interaction of point defects in cubic and hexagonal crystals
    
    Fizika Tverdogo Tela, 58:5 (2016),  941–949
69. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate
    
    Fizika Tverdogo Tela, 58:5 (2016),  937–940
70. Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon
    
    Fizika Tverdogo Tela, 58:4 (2016),  725–729
71. Epitaxial growth of cadmium sulfide films on silicon
    
    Fizika Tverdogo Tela, 58:3 (2016),  612–615
72. The C 1$s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4$^\circ$ layer and Cs/SiC/Si(111)-4$^\circ$ interface
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1348–1352
73. Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  51–57
74. Molecular dynamics simulation of the indentation of nanoscale films on a substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  64–72
75. Determining polytype composition of silicon carbide films by UV ellipsometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:4 (2016),  16–22
76. Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon
    
    Fizika Tverdogo Tela, 57:12 (2015),  2469–2474
77. Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions
    
    Fizika Tverdogo Tela, 57:12 (2015),  2451–2457
78. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN
    
    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
79. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
    
    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
80. Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire
    
    Fizika Tverdogo Tela, 57:4 (2015),  796–801
81. Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure
    
    Fizika Tverdogo Tela, 57:1 (2015),  153–162
82. The equilibrium state in the Si–O–C ternary system during SiC growth by chemical substitution of atoms
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  1–9
83. Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions
    
    Fizika Tverdogo Tela, 56:12 (2014),  2440–2445
84. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
    
    Fizika Tverdogo Tela, 56:8 (2014),  1457–1485
85. First-order phase transition through an intermediate state
    
    Fizika Tverdogo Tela, 56:4 (2014),  761–768
86. Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  53–59
87. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
88. Epitaxial silicon carbide on a 6" silicon wafer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  71–79
89. Anisotropy of the solid-state epitaxy of silicon carbide in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1575–1579
90. Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  25–32
91. Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013),  81–88
92. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
93. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
94. Structural characterization of GaN epilayers on silicon: Effect of buffer layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  72–79
95. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
96. Thin-film condensation processes
    
    UFN, 168:10 (1998),  1083–1116
97. Disclination splitting and crystal–glass transformation under mechanical fusing
    
    Fizika Tverdogo Tela, 34:1 (1992),  288–292