Shernyakov Yury Mikhailovich

Publications in Math-Net.Ru

1. Spatial current distribution in semiconductor optical amplifiers with ridge waveguides and quantum well-dot active region
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  310–313
3. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
4. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
5. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
6. Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  57–60
7. Dependence of lasing wavelength on optical loss in quantum dot laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
8. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
9. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
10. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
11. Information encoding using two-level generation in a quantum dot laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
12. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
13. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
14. The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  933–939
15. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
16. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
17. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
18. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
19. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
20. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
21. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
22. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
23. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
24. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
25. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
26. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
27. Investigation of the modified structure of a quantum cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
28. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
29. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
30. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
31. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
32. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
33. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
34. Preparation of a strip structure for quantum-cascade lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  32–37
35. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
36. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
37. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  241–246
38. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
39. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1401–1406
40. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
    
    UFN, 169:4 (1999),  459–464
41. Фотолюминесценция аморфных пленок $a$-Si$_{1-x}$C$_{x}$ : H
    
    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  710–716
42. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
43. Quantum-dimensional laser with single heterojunction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
44. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
45. Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure
    
    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  502–506
46. Спектральная зависимость коэффициента лавинного умножения в варизонной $p{-}n$-структуре
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  753–755