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Publications in Math-Net.Ru
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Time delay of stimulated emission from lead chalcogenide diode lasers
Kvantovaya Elektronika, 22:12 (1995), 1255–1256
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Temperature dependence of the threshold current of PbSe/PbSnSe DH lasers
Kvantovaya Elektronika, 20:4 (1993), 345–348
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Magnetoresistivity of $\mathrm{A}^{4}\mathrm{B}^{6}$-based point contacts
Fizika Tverdogo Tela, 34:11 (1992), 3339–3344
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Analysis of composition dependence of gap width of Pb$_{1-x}$Sn$_{x}$Se$_{1-y}$Te$_{y}$ isoperiodic with PbSe in limits of the p-model
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 280–283
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Investigation of the current-voltage characteristics of injection lasers with isoperiodic PbSnSeTe layers
Kvantovaya Elektronika, 19:2 (1992), 128–131
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PHOTO-STIMULATED EPITAXY FROM VAPOR-PHASE AT LOW-PRESSURE OF ZNSE FILMS
BASED ON SI
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 74–78
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Measurement of the emission line width of TEA CO2 lasers using tunable diode lasers
Kvantovaya Elektronika, 17:8 (1990), 1077–1080
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Autowaves of the carrier density in PbS$_{1-x}$Se$_x$ injection lasers
Kvantovaya Elektronika, 16:12 (1989), 2426–2432
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Laser effect in PbSSe compounds pumped longitudinally with an electron beam
Kvantovaya Elektronika, 16:10 (1989), 2020–2022
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Intracavity detection of absorption with the aid of a tunable semiconductor laser emitting in the middle infrared range
Kvantovaya Elektronika, 15:3 (1988), 582–589
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Effect of super equilibrium population of excited states of $\mathrm{CO}_2$ degraded vibrational
modes under conditions of vibrational-translational nonequilibrium
Dokl. Akad. Nauk SSSR, 297:5 (1987), 1100–1103
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Logarithmic relaxation of persistent photoconductivity
in $\mathrm{Pb}_{0,78}\mathrm{Sn}_{0,22}\mathrm{Te}$
Dokl. Akad. Nauk SSSR, 293:3 (1987), 602–605
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MEASUREMENT OF THE PROGRESSIVE TEMPERATURE OF NONEQUILIBRIUM-EXCITED GAS
BY DIODE-LASER SPECTROSCOPY METHODS
Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987), 1167–1170
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$Pb\,S/Pb\,S\,Se/Pb\,Sn\,Se$ heterolasers with separate electron and optical restrictions obtained by the molecular epitaxy method
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:22 (1986), 1386–1389
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Dependence of Gap Width on the
Composition of PbS$_{1-x}$Se$_{x}$ (${0\leqslant x\leqslant1}$) Solid Solution
Fizika i Tekhnika Poluprovodnikov, 19:12 (1985), 2149–2153
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Application of the diode laser-based spectrometer for the estimation of $B\,Cl_3$ content in $Ge\,Cl_4$
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985), 595–599
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Determination of the parameters of frequency fluctuations of a pulse-periodic diode laser
Kvantovaya Elektronika, 12:2 (1985), 385–387
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APPLICATION OF DIODE-LASERS OF MEDIUM IR-BANDS IN SPECTRAL GAS-ANALYSIS
Zhurnal Tekhnicheskoi Fiziki, 54:8 (1984), 1542–1551
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Резонансные состояния вблизи дна зоны проводимости в нелегированных
кристаллах
Pb$_{1-x}$Sn$_{x}$Se (${x=0.2{-}0.33}$)
Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1583–1587
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Investigation of the broadening of absorption lines of molecular gases by methods of pulsed laser diode spectroscopy
Kvantovaya Elektronika, 11:12 (1984), 2443–2451
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Picosecond parametric oscillator amplifying radiation from a tunable semiconductor laser
Kvantovaya Elektronika, 11:1 (1984), 203–205
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The composition and conductivity type of the $\mathrm{Pb}_{1-x}\mathrm{Sn}_x\mathrm{Se}_{1-y}\mathrm{Te}_y$ epitaxial layers
Dokl. Akad. Nauk SSSR, 272:6 (1983), 1371–1374
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Pb$_{1-x}$Se$_{x}$ лазеры с контролируемым профилем концентрации
носителей, изготовленных методом молекулярной эпитаксии
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983), 881–884
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External-cavity diode laser emitting in the middle infrared range
Kvantovaya Elektronika, 10:2 (1983), 445–447
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Analysis of factors influencing the threshold current of Pb1–xSnxSe injection heterolasers
Kvantovaya Elektronika, 9:11 (1982), 2140–2150
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Pulsed laser diode device for measuring the concentration of carbon monoxide in the atmosphere over a long path
Kvantovaya Elektronika, 9:3 (1982), 531–536
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Composition and type of the conductivity of the $\mathrm{Pb}_{1-x}\mathrm{Sn}_x\mathrm{Se}$ epitaxial layers
Dokl. Akad. Nauk SSSR, 259:1 (1981), 83–86
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Laser spectroscopy of the $\nu_2+\nu_4$ combination vibration of the $CF_4$ molecule and $CF_4$ laser tuning curves
Kvantovaya Elektronika, 7:9 (1980), 1885–1894
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Vibrational-rotational spectra of the $\nu_3$ band of ${}^{192}OsO_4$ gas obtained using a diode laser
Kvantovaya Elektronika, 7:4 (1980), 908–911
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Optically pumped Pb$_{1-x}$Sn$_x$Se$_{1-y}$Te$_y$ heterojunction lasers with matched gratings at the interface
Kvantovaya Elektronika, 5:12 (1978), 2630–2633
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Pressure-tunable cw PbSe injection laser
Kvantovaya Elektronika, 5:3 (1978), 692–694
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Multicomponent solid solutions of IV-VI compounds
Kvantovaya Elektronika, 4:4 (1977), 904–907
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Конференция по физическим вопросам квантовой электроники в Пуэрто-Рико
UFN, 88:1 (1966), 177–184
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Semiconducting quantum generator with the $p$–$n$ transition in $\mathrm{GaAs}$
Dokl. Akad. Nauk SSSR, 150:2 (1963), 275–278
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In memory of Viktor Sergeevich Vavilov
UFN, 170:2 (2000), 203–204
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Investigation of the distribution of CO$_2$ molecules between vibrational–rotational levels in a glow discharge by the method of pulsed diode laser spectroscopy
Kvantovaya Elektronika, 14:4 (1987), 851–859
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Bentsion Moiseevich Vul (Obituary)
UFN, 149:2 (1986), 349–350
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Bentsion Moiseevich Vul (on his eightieth birthday)
UFN, 140:1 (1983), 161–162
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