Usikov Alexandr Sergeyevich

Publications in Math-Net.Ru

1. Graphene-based biosensors for neurodegenerative dementia detection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
2. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
3. Chemiluminescence of a functionalized graphene surface
   
   Optics and Spectroscopy, 130:9 (2022),  1417–1422
4. Modification in adsorption properties of graphene during the development of viral biosensors
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
5. Studying the sensitivity of graphene for biosensor applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
6. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
7. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
8. Electrochemical etching of $p$–$n$-GaN/AlGaN photoelectrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  80–87
9. Radiation hardness of $n$-GaN Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
10. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
11. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  386–391
12. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858
13. KINETICS OF PHOTOGRAPHIC FLOW IN ARSENIDE-GALLIUM STRUCTURES WITH THE BUILT-IN POTENTIAL BARRIER
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1565–1570
14. Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  296–300
15. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY
    
    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414