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Shmidt Nataliya Mikhailovna

Publications in Math-Net.Ru

  1. Радиационная стойкость датчиков МНПВО на основе двойных гетероструктур $p$-InAsSbP/$n$-InAs, облученных гамма-квантами

    Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  112–121
  2. Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  397–401
  3. Graphene-based biosensors for neurodegenerative dementia detection

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
  4. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
  5. Optical characterization of InGaAsP/InP(001) heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
  6. Study of stress relief and strain distribution in graphene films of biosensors for viral infections

    Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
  7. Participation of defects localized at heterointerfaces and extended defects in the degradation of nitride-based light-emitting devices

    Optics and Spectroscopy, 131:11 (2023),  1499–1501
  8. Modification in adsorption properties of graphene during the development of viral biosensors

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
  9. Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  45–48
  10. Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  555–561
  11. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
  12. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
  13. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
  14. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
  15. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
  16. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
  17. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
  18. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
  19. Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  219–223
  20. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
  21. Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  226–229
  22. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1135–1139
  23. Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:5 (2003),  270–274
  24. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  25. ZN DIFFUSION IN INP AND ZN-BASED SOLID-SOLUTIONS FROM POLYMER FILM DIFFUSANTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:13 (1992),  35–38
  26. Исследование влияния химической обработки InP на скорость поверхностной рекомбинации методом комбинационного рассеяния света

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2177–2180
  27. Исследование кинетики фотопроводимости в коротких фоторезисторах на основе InP : Fe

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2167–2171
  28. Измерение ВАХ InGaAs при помощи пикосекундной электрооптической стробирующей установки

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  848–854
  29. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
  30. Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1498–1501
  31. Removal of a Nonequilibrium Plasma from Short InP : Fe Photoresistors by an Electric Field

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  70–74
  32. Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1059–1062
  33. FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2064–2066
  34. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  35. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
  36. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
  37. Высокоэффективный фотодетектор для ультрафиолетового излучения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519

© Steklov Math. Inst. of RAS, 2026